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III-V group nitride system semiconductor self-standing substrate, method of making the same and III-V group nitride system semiconductor wafer

  • US 20060033119A1
  • Filed: 02/09/2005
  • Published: 02/16/2006
  • Est. Priority Date: 08/10/2004
  • Status: Active Grant
First Claim
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1. A III-V group nitride system semiconductor self-standing substrate, comprising:

  • III-V group nitride system semiconductor crystal, wherein the substrate has a dislocation density distribution that is substantially uniform at least at a surface of the substrate.

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