Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
First Claim
Patent Images
1. A pixel cell comprising:
- a substrate;
a photo-conversion device formed in said substrate; and
an isolation channel layer disposed over said substrate.
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Abstract
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.
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Citations
55 Claims
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1. A pixel cell comprising:
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a substrate;
a photo-conversion device formed in said substrate; and
an isolation channel layer disposed over said substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A pixel cell comprising:
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a substrate having a transistor region and a photo-conversion region;
a photo-conversion device formed in the photo-conversion region of said substrate; and
an isolation channel layer disposed over said transistor region. - View Dependent Claims (11, 12, 13, 14)
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15. A pixel cell comprising:
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a substrate having a transistor region and a photo-conversion region wherein said transistor region has source and drain region; and
an isolation channel layer disposed over said source and drain region of said transistor region. - View Dependent Claims (16, 17, 18)
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19. A method of forming a pixel cell, the method comprising the steps of:
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forming a substrate;
forming a nitride layer over said substrate at selected location to form an exposed pattern; and
forming an isolation channel layer over the substrate at locations corresponding to said exposed pattern. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of forming a pixel cell, the method comprising the steps of:
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forming a substrate; and
forming a carbon rich isolation channel layer over the substrate. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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43. A CMOS imager comprising:
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a pixel cell, comprising;
a substrate surface;
a photo-conversion device formed in said substrate; and
an isolation channel layer disposed over said substrate. - View Dependent Claims (44, 45, 46, 47, 48, 49, 50, 51)
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52. A CMOS imager comprising:
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a pixel cell, comprising;
a substrate having a transistor region and a photo-conversion region wherein said transistor region has source and drain region; and
an isolation channel layer disposed over said source and drain region of said transistor region. - View Dependent Claims (53, 54, 55)
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Specification