Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
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Accused Products
Abstract
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the substrate of the pixel cell to reduce the dark current leakage.
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Citations
43 Claims
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1-18. -18. (canceled)
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19. A method of forming a pixel cell, the method comprising the steps of:
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forming a substrate;
forming a nitride layer over said substrate at selected location to form an exposed pattern; and
forming an isolation channel layer over the substrate at locations corresponding to said exposed pattern. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28)
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29. A method of forming a pixel cell, the method comprising the steps of:
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forming a substrate; and
forming a carbon rich isolation channel layer over the substrate. - View Dependent Claims (30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42)
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43-55. -55. (canceled)
Specification