Integrated electroless deposition system
First Claim
1. An electroless deposition cluster tool, comprising:
- a mainframe;
at least one electroless plating cell in an environmentally controlled enclosure, wherein the at least one electroless plating cell is on the mainframe; and
at least one electroplating cell on the mainframe.
1 Assignment
0 Petitions
Accused Products
Abstract
Embodiments of the invention provide a cluster tool configured to deposit a material onto a substrate surface by using one or more electroless, electrochemical plating, CVD and/or ALD processing chambers. In one aspect, a ruthenium-containing catalytic layer is formed. Embodiments of the invention provide a hybrid deposition system configured to deposit a seed layer on a substrate with an electroless process and to subsequently fill interconnect features on the substrate with an ECP cell. Other aspects provide an electroless deposition system configured to deposit a seed layer on a substrate, fill interconnect features on a substrate, or sequentially deposit both a seed layer and fill interconnect features on the substrate. One embodiment provides an electroless deposition system configured to form a capping layer over substrate interconnects. The system includes a vapor dryer for pre- and post-deposition cleaning of substrates as well as a brush box chamber for post-deposition cleaning.
-
Citations
43 Claims
-
1. An electroless deposition cluster tool, comprising:
-
a mainframe;
at least one electroless plating cell in an environmentally controlled enclosure, wherein the at least one electroless plating cell is on the mainframe; and
at least one electroplating cell on the mainframe. - View Dependent Claims (2, 3, 4, 5, 19, 20, 21, 22)
-
-
6. An electroless deposition cluster tool, comprising:
-
at least one electroless plating cell on a mainframe;
at least one electroplating cell on the mainframe;
at least one IBC chamber on the mainframe; and
at least one SRD chamber on the mainframe. - View Dependent Claims (7, 8)
-
-
9. An electroless deposition cluster tool, comprising:
-
at least one electroless plating cell in an environmentally controlled enclosure, wherein the at least one electroless plating cell is on a mainframe; and
at least one SRD chamber on the mainframe. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
-
16. An electroless deposition cluster tool, comprising:
-
at least one electroless plating cell in an environmentally controlled enclosure, wherein the at least one electroless plating cell is on a mainframe;
at least one brush box chamber on the mainframe; and
at least one vapor dryer chamber on the mainframe. - View Dependent Claims (17, 18)
-
-
23. An electroless deposition cluster tool, comprising:
-
at least one plasma processing chamber that is on a mainframe and is adapted to form a reducing layer and/or a catalytic layer on a substrate, wherein the at least one plasma processing chamber comprises;
one or more walls forming a processing region;
a temperature-controlled substrate support on one of the one or more walls, wherein the temperature-controlled substrate support is adapted to support the substrate during processing;
a gas supply adapted to provide appropriate process gases to the process region for forming a reducing layer and/or a catalytic layer on the substrate;
a gas distribution showerhead on the one of the one or more walls and in fluid communication with the gas supply, wherein the gas distribution showerhead is adapted to distribute process gases uniformly into the process region; and
an RF power supply connect to the gas distribution showerhead so that the gas distribution showerhead can be adapted to control a plasma generated in the processing region; and
at least one fluid processing chamber on the mainframe, wherein the at least one fluid processing chamber comprises;
a substrate support assembly adapted to support and rotate the substrate;
one or more fluid dispense arms adapted to dispense multiple processing fluids onto a surface of a substrate on the substrate support assembly; and
a substrate processing platen assembly adapted to dispense a temperature controlled fluid to the backside of the substrate during processing. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
-
-
31. An electroless cluster tool, comprising:
-
at least one plasma processing chamber on a mainframe that is adapted to form a reducing layer on a substrate, comprising;
one or more walls forming a processing region;
a temperature-controlled substrate support on one of the one or more walls, wherein the temperature-controlled substrate support is adapted to support the substrate during processing;
a gas supply adapted to provide a process gas to the process region to forming a reducing layer on a surface of a substrate on the temperature-controlled substrate support;
a gas distribution showerhead on one of the one or more walls and is in fluid communication with the gas supply, wherein the gas distribution showerhead is adapted to distribute process gases uniformly into the process region; and
an RF power supply connect to the gas distribution showerhead so that the gas distribution showerhead can be adapted to control a plasma generated in the processing region; and
at least one fluid processing chamber that is on the mainframe and is adapted to form a metal-containing catalytic and/or conductive layer on a surface of a substrate via an electroless plating process, comprising;
a substrate support assembly adapted to support and rotate the substrate;
one or more fluid dispense arms adapted to dispense multiple processing fluids onto a surface of the substrate on the substrate support assembly; and
a substrate processing platen assembly adapted to dispense a temperature controlled fluid to the backside of a substrate on the substrate support assembly. - View Dependent Claims (32, 33, 34, 35, 36)
-
-
37. An electroless cluster tool, comprising:
-
at least one plasma processing chamber adapted to form a reducing and/or a barrier layer on a substrate, comprising;
one or more walls forming a processing region;
a temperature-controlled substrate support on one of the one or more walls, wherein the temperature-controlled substrate support is adapted to support the substrate during processing;
a gas supply adapted to provide appropriate process gases to the process region for forming a reducing layer and/or a barrier layer on the substrate;
a gas distribution showerhead on one of the one or more walls and is in fluid communication with the gas supply, wherein the gas distribution showerhead is adapted to distribute process gases uniformly into the process region; and
an RF power supply connect to the gas distribution showerhead so that the gas distribution showerhead can be adapted to control a plasma generated in the processing region;
a first fluid processing chamber, adapted to form a metal-containing catalytic and/or conductive layer on the substrate via an electroless plating process; and
a second fluid processing chamber, adapted to form a conductive layer on the substrate via an electroplating process. - View Dependent Claims (38)
-
-
39. A substrate plating cluster tool, comprising:
-
a plasma chamber adapted to deposit a ruthenium-containing catalytic layer on a substrate, comprising;
a ruthenium tetroxide generation system comprising;
a vessel that is adapted to retain an amount of ruthenium metal;
an oxidizing source that is adapted to deliver an ozone containing gas to the vessel to form a ruthenium tetroxide-containing gas in the vessel; and
a source vessel assembly that is in fluid communication with the vessel and is adapted to collect the ruthenium tetroxide containing gas formed in the vessel, wherein the source vessel assembly comprises;
a source vessel; and
a heat exchanging device that is in thermal communication with the source vessel and is adapted to control the temperature of the source vessel; and
a processing chamber in fluid communication with the source vessel; and
a processing chamber adapted to form a conductive layer on the substrate. - View Dependent Claims (40, 41, 42, 43)
-
Specification