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Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor

  • US 20060035420A1
  • Filed: 08/24/2005
  • Published: 02/16/2006
  • Est. Priority Date: 03/07/2003
  • Status: Active Grant
First Claim
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1. An ion-sensitive field effect transistor with a gate comprising a sensitive layer, wherein the sensitive layer comprises a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.

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