Systems and methods for forming metal-containing layers using vapor deposition processes
First Claim
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1. A method of forming a metal-containing layer on a substrate, the method comprising:
- providing a substrate;
providing a precursor composition comprising at least one compound of the formula (Formula I);
wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1;
vaporizing the precursor composition; and
contacting the vaporized precursor composition to form a metal-containing layer on the substrate using a vapor deposition process.
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Abstract
A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heteroleptic precursor compounds that include, for example, guanidinate, phosphoguanidinate, isoureate, thioisoureate, and/or selenoisoureate ligands using a vapor deposition process is provided.
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Citations
67 Claims
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1. A method of forming a metal-containing layer on a substrate, the method comprising:
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providing a substrate;
providing a precursor composition comprising at least one compound of the formula (Formula I);
wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1;
vaporizing the precursor composition; and
contacting the vaporized precursor composition to form a metal-containing layer on the substrate using a vapor deposition process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor structure, the method comprising:
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providing a semiconductor substrate or substrate assembly;
providing at least one precursor compound of the formula (Formula I);
wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1;
providing at least one reaction gas;
vaporizing the precursor compound of Formula I; and
contacting the vaporized precursor compound of Formula I and the reaction gas with the substrate to form a metal-containing layer on the semiconductor substrate or substrate assembly using a vapor deposition process. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A method of manufacturing a semiconductor structure, the method comprising:
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providing a semiconductor substrate or substrate assembly within a deposition chamber;
providing a vapor comprising at least one precursor compound of the formula (Formula I);
wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1;
directing the vapor comprising the at least one precursor compound of Formula I to the semiconductor substrate or substrate assembly and allowing the at least one compound to chemisorb to at least one surface of the semiconductor substrate or substrate assembly;
providing at least one reaction gas; and
directing the at least one reaction gas to the semiconductor substrate or substrate assembly with the chemisorbed species thereon to form a metal-containing layer on at least one surface of the semiconductor substrate or substrate assembly. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54)
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55. A method of manufacturing a memory device structure, the method comprising:
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providing a substrate having a first electrode thereon, providing at least one precursor compound of the formula (Formula I);
wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1;
vaporizing the at least one precursor compound of Formula I;
contacting the at least one vaporized precursor compound of Formula I with the substrate to chemisorb the compound on the first electrode of the substrate;
providing at least one reaction gas;
contacting the at least one reaction gas with the substrate with the chemisorbed compound thereon to form a dielectric layer on the first electrode of the substrate; and
forming a second electrode on the dielectric layer.
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56. A vapor deposition apparatus comprising:
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a deposition chamber having a substrate positioned therein; and
at least one vessel comprising at least one precursor compound of the formula (Formula I);
wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1. - View Dependent Claims (57, 58)
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59. A precursor composition for use in a vapor deposition process comprising at least one compound of the formula (Formula I):
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wherein;
M is selected from the group consisting of a Group 2 to Group 15 metal, a lanthanide, an actinide, and combinations thereof, E is OR3;
each R1, R2, and R3 is independently an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1. - View Dependent Claims (60, 61)
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62. A precursor composition for use in a vapor deposition process comprising at least one compound of the formula (Formula I):
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wherein;
M is lanthanum;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
each R1, R2, and R3 is independently an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1. - View Dependent Claims (63, 64)
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65. A precursor composition for use in a vapor deposition process comprising at least one compound of the formula (Formula I):
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wherein;
M is hafnium;
E is XR3 or YR3R4, wherein X is O, S, or Se, and Y is N or P;
R1 and R2 are isopropyl groups;
R3 is an organic group;
R4 is hydrogen or an organic group;
L is an anionic supporting ligand;
n is the oxidation state of M; and
x is 0 to n-1. - View Dependent Claims (66, 67)
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Specification