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Polishing pad and method for manufacturing semiconductor device

  • US 20060037699A1
  • Filed: 11/27/2003
  • Published: 02/23/2006
  • Est. Priority Date: 11/27/2002
  • Status: Active Grant
First Claim
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1. A polishing pad used in chemical mechanical polishing and having a polishing region and a light-transmitting region, said polishing pad having at least one of the following characteristics:

  • i) light transmittance in the light-transmitting region throughout the wavelength range of 400 to 700 nm is 50% or more;

    ii) a thickness of the light-transmitting region is 0.5 to 4 mm. and light transmittance in the light-transmitting region throughout the wavelength range of 600 to 700 nm is 80% or more;

    or iii) the light-transmitting region is arranged between a central portion and a peripheral portion of the polishing pad, and a length (D) in a diametrical direction is 3 times or more longer than a length (L) in a circumferential direction.

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