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Current sensor using mirror MOSFET and PWM inverter incorporating the same

  • US 20060038523A1
  • Filed: 10/18/2005
  • Published: 02/23/2006
  • Est. Priority Date: 12/19/2002
  • Status: Active Grant
First Claim
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1. A current sensor comprising:

  • a power MOSFET connected between an electric load and a power source, for controlling current that flows through said electric load;

    a mirror MOSFET connected in parallel to said power MOSFET, such that a current that flows through said mirror MOSFET is equal to a portion of a current that flows through said power MOSFET;

    a current detection resistor connected between a source electrode of said power MOSFET and a source electrode of said mirror MOSFET; and

    a converting means for converting both positive and negative voltages generated across said current detection resistor into a current detection signal that is always positive or is always negative;

    wherein said current detection resistor has a resistance value Rrc such that a value obtained as the result of a current Imain, which flows through said power MOSFET or a parasitic diode of said power MOSFET, divided by a mirror ratio X of said power MOSFET to said mirror MOSFET, and multiplied by the resistance value Rrc is less than a voltage drop value VD of said power MOSFET or of the parasitic diode of said power MOSFET, when said current is flowing.

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