Series-parallel resonant matching circuit and broadband amplifier thereof

• US 20060038632A1
• Filed: 08/20/2004
• Published: 02/23/2006
• Est. Priority Date: 08/20/2004
• Status: Abandoned Application

• Current Assignee: Chung-Shan Institute of Science & Technology Armaments Bureau MND (Government of The Republic of China)
• Original Assignee: Chung-Shan Institute of Science & Technology Armaments Bureau MND (Government of The Republic of China)
• Inventors: Li, Hao-Jung, Niu, Dow-Chih, Huang, Yuen-Shiang
• Application Number:
  US10/923,196
• Publication Number:
  US 20060038632A1
• Time in Patent Office: Days
• US Class Current: 333/32
• CPC Class Codes: H03F 2200/294 the amplifier being a low noise amplifier [LNA]
• CPC Class Codes: H03F 2200/36 the amplifier comprising means for increasing the bandwidth
• CPC Class Codes: H03F 3/191 Tuned amplifiers H03F3/193, H03F3/195 take precedence
• CPC Class Codes: H03H 7/38 Impedance-matching networks

Abstract

A series-parallel resonant matching circuits and a broadband power amplifier thereof are disclosed. The series-parallel resonant matching circuit is connected to the last power transistor and the next power transistor. The series-parallel resonant matching circuit comprises a series matching inductor, a parallel matching inductor and an impedance transformation unit. The impedance transformation unit is connected between the series matching inductor and the intrinsic parallel matching inductor for transforming impedance. The parallel matching inductor and the parallel capacitor of a last level power transistor constitute a LC parallel resonant circuit, the series matching inductor and the series intrinsic capacitor of a next level power transistor constitute a LC series resonant circuit. Besides, the intrinsic parallel capacitance is a drain-to-source capacitor for the power transistor. The intrinsic series capacitance is a gate-to-source capacitor for the power transistor.

Claims

1. A series-parallel resonant matching circuit, comprising:

a series matching inductor;

a parallel matching inductor; and

an impedance transformation unit connected between the series matching inductor and the parallel matching inductor for transforming impedance.

2. The series-parallel resonant matching circuit of claim 1, wherein the series-parallel resonant matching circuit comprises an input terminal and an output terminal, the input terminal is connected to a first-stage power transistor, and the output terminal is connected to a second-stage power transistor.

3. The series-parallel resonant matching circuit of claim 2, wherein the first-stage power transistor comprises a first intrinsic parallel capacitor, and the first intrinsic parallel capacitor and the parallel matching inductor constitutes a LC parallel resonant circuit.

4. The series-parallel resonant matching circuit of claim 3, wherein the first parallel capacitor is a drain-to-source capacitor for the first-stage power transistor.

5. The series-parallel resonant matching circuit of claim 4, wherein the second-stage power transistor comprises a second intrinsic series capacitor, and the second intrinsic series capacitor and the series matching inductor constitute a LC series resonant circuit.

6. The series-parallel resonant matching circuit of claim 5, wherein the second series capacitor is a gate-to-source capacitor for the second-stage power transistor.

7. The series-parallel resonant matching circuit of claim 1 adapted for a multi-stage microwave power amplifier.

8. A broadband power amplifier, comprising:

N-stage power transistors, each of the transistors comprising a series capacitor and a parallel capacitor; and

N−

1 series-parallel resonant matching circuits, each of the series-parallel resonant matching circuits having a series matching inductor and a parallel matching inductor, the series-parallel resonant matching circuits alternatively connected to the power transistors, wherein the parallel matching inductor of each series-parallel resonant matching circuit and the intrinsic parallel capacitor (drain to source capacitor) of a last level power transistor constitute a LC parallel resonant circuit, the series matching inductor of each series-parallel resonant matching circuit and the series intrinsic capacitor (gate to source capacitor) of a next level power transistor constitute a LC series resonant circuit, and N is a positive integral number larger than or equal to 1.

9. The broadband power amplifier of claim 8, wherein each of the series-parallel resonant matching circuits further comprises an impedance transformation unit, the impedance transformation unit is disposed between the parallel matching inductor and the series matching inductor for transforming impedance.