Electro-optical device

• US 20060038932A1
• Filed: 10/25/2005
• Published: 02/23/2006
• Est. Priority Date: 03/17/2000
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Murade, Masao
• Granted Patent: US 8,525,960 B2
• Time in Patent Office: Days
• US Class Current: 349/42
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence

Abstract

An electro-optical device includes a substrate on which a TFT, a data line, a scanning line, a capacitance line, a first intermediate conductive layer, a second intermediate conductive layer, and a pixel electrode are formed. A first contact hole, via which the drain of the TFT and the first intermediate conductive layer are connected to each other, is formed in an area which overlaps, in plan view, with the data line. The above-described structure of this electro-optical device, which includes the intermediate conductive layer disposed between the pixel electrode and the pixel switching TFT, allows an increase in the pixel aperture ratio and also an increase in the storage capacitance. Besides, degradation in the quality of a displayed image due to steps formed, in the vicinity of the pixel electrode, on the surface of an alignment film is minimized.

Claims

1. An electro-optical device, comprising:

a plurality of pixel electrodes disposed adjacent to each other;

a data line disposed between the adjacent pixel electrodes; and

a light-shielding conductive layer overlapped the data line;

wherein the adjoined pixel electrodes are disposed in a non-overlapping condition with the data line, and the adjacent pixel electrodes are disposed in an overlapping condition with the light-shielding conductive layer.

2. The electro-optical device according to claim 1, further comprising:

a pixel transistor having a semiconductor; and

a storage capacitor having a first capacitor electrode which forms a drain region of the semiconductor, and a second capacitor electrode which opposes the first capacitor electrode;

wherein the light-shielding conductive layer is electrically connected to the second capacitor electrode.

3. The electro-optical device according to claim 2, the storage capacitor is disposed so as to overlap the data line.

4. The electro-optical device according to claim 3, the light-shielding conductive layer is wider than the second capacitor electrode.

5. A projector, comprising:

a light valve including the electro-optical device of claim 1.