Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method
First Claim
1. A system comprising:
- a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including;
a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;
a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed;
a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and
a unit for obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values.
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Accused Products
Abstract
A standard pattern of a differential value of an interference light is set with respect to a predetermined film thickness of a first member to be processed. The standard pattern uses a wavelength as a parameter. Then, an intensity of an interference light of a second member to be processed, composed just like the first member, is measured with respect to each of a plurality of wavelengths so as to obtain a real pattern of an differential value of the measured interference light intensity. The real pattern also uses a wavelength as a parameter. Then, the film thickness of the second member is obtained according to the standard pattern and the real pattern of the differential value.
16 Citations
1 Claim
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1. A system comprising:
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a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including;
a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;
a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed;
a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and
a unit for obtaining a film thickness of said second member according to said standard pattern consisting of said time differential values and said real pattern consisting of said time differential values.
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Specification