Method and system for sequential processing in a two-compartment chamber

• US 20060040055A1
• Filed: 06/23/2005
• Published: 02/23/2006
• Est. Priority Date: 08/06/2002
• Status: Abandoned Application

• Current Assignee: Tegal Corp. (Rennova Health, Inc.)
• Original Assignee: Tegal Corp. (Rennova Health, Inc.)
• Inventors: Nguyen, Tue, Nguyen, Tai Dung
• Application Number:
  US11/159,655
• Publication Number:
  US 20060040055A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/44 characterised by the method of coating C23C16/04 takes precedence
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece

Abstract

An apparatus and method for sequential and isolated processing of a workpiece comprises a two compartment chamber and a mechanism to transfer the workpiece from a fist compartment to a second compartment by rotating the workpiece on a workpiece mover through an internal pathway. The transfer mechanism comprises two doors coupled to the workpiece mover to seal the internal pathway between the first and second compartments so that the two compartments are isolated and the workpiece can be processed sequentially and in isolation. The apparatus further comprises components to enable the processing of a workpiece. The preferred method of processing a workpiece is to deposit or adsorb a thin layer in the first compartment and then transfer by rotating the workpiece on the workpiece mover to the second compartment for further processing. The workpiece can then be transferred once again to the first compartment for further processing, and again to the second compartment, repeating the processing and transferring steps until a desired thin film is achieved.

Claims

1. A method for sequentially processing a plurality of workpieces, the method comprising the steps of:

a) processing a first plurality of workpieces on a first workpiece mover in a first compartment and a second plurality of workpieces on a second workpiece mover in a second compartment;

b) exchanging the workpieces on the workpiece movers between the first and second compartments through a plurality of internal pathways, the first and second compartments being isolated from each other by a first plurality of pathway doors coupled to the workpiece movers;

c) processing the first plurality of workpieces in the second compartment and the second plurality of workpieces in the first compartment; and

d) exchanging the workpieces on the workpiece movers between the first and second compartments through the internal pathways, the first and second compartments being isolated from each other by a second plurality of pathway doors coupled to the workpiece movers.

2. A method as in claim 1 further comprising a purging step before or after the exchanging steps for removing a cross-contamination between the first compartment and the second compartment.

3. A method as in claim 1, wherein the processing steps further comprise depositing a thin film.

4. A method as in claim 1, wherein the processing steps further comprise flowing a plurality of precursors.

5. A method as in claim 1, wherein the processing steps in the first compartment comprise etching a thin film.

6. A method as in claim 1, wherein the processing steps in the first compartment comprise depositing a thin film.

7. A method as in claim 1, wherein the processing steps in the first compartment comprise depositing a thin film and the processing steps in the second compartment comprise etching a thin film.

8. A method as in claim 1, wherein the processing steps in the first compartment comprise depositing a thin film and the processing steps in the second compartment comprise treating a thin film.

9. A method as in claim 1, wherein the processing steps in the first compartment comprise depositing a thin film and the processing steps in the second compartment comprise plasma treating a thin film.

10. A method as in claim 1, wherein the processing steps in the first compartment comprise adsorbing a thin film and the processing steps in the second compartment comprise reacting a thin film.

11. A method as in claim 1, wherein the processing steps in the first compartment comprise adsorbing a thin film and the processing steps in the second compartment comprise plasma reacting a thin film.

12. A method as in claim 1, further comprising the steps of:

e) repeating the rotating and processing steps until a thin film of a desired thickness and having desired characteristics is deposited.

13. A method as in claim 1 further comprising removing a cross-contamination between the first compartment and the second compartment by a pumping step before or after at least one of the rotating step (b) and the rotating step (d).

14. An improved method for sequentially processing a plurality of workpieces on at least two workpiece movers, the improvement comprising:

enhancing throughput of the processing by exchanging said workpiece movers through a plurality of internal pathways between at least two processing chambers; and

isolating each chamber for each of a plurality of processing steps with a plurality of doors coupled to the workpiece mover, said doors sealing the internal pathways at completion of the exchanging step.

15. A method as in claim 14 wherein the at least two processing chambers comprise a processing chamber for depositing a thin film and a processing chamber for treating a thin film.

16. A method as in claim 14 wherein the at least two processing chambers comprise a processing chamber for depositing a thin film and a processing chamber for plasma treating a thin film.

17. A method as in claim 14 for ALD processing wherein the at least two processing chambers comprise a processing chamber for adsorbing a thin film and a processing chamber for reacting a thin film.

18. A method as in claim 14 for ALD processing wherein the at least two processing chambers comprise a processing chamber for adsorbing a thin film and a processing chamber for plasma reacting a thin film.

19. A method as in claim 14 wherein the at least two processing chambers comprise a processing chamber for depositing a thin film and a processing chamber for etching a thin film.

20. A method for sequentially processing a plurality of workpieces, the method comprising the steps of:

a) processing a first workpiece associated with a first workpiece mover in a first compartment and a second workpiece associated with a second workpiece mover in a second compartment;

b) exchanging the workpieces on the workpiece movers between the first and second compartments through a plurality of internal pathways, the first and second compartments being isolated from each other by a first plurality of pathway doors coupled to the workpiece movers, with said pathway doors closing the internal pathways;

c) processing the first plurality of workpieces in the second compartment and the second plurality of workpieces in the first compartment; and

d) exchanging the workpieces on the workpiece movers between the first and second compartments through the internal pathways, the first and second compartments being isolated from each other by a second plurality of pathway doors coupled to the workpiece movers, with said pathway doors closing the internal pathways.