Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching
First Claim
1. A process for removal of a photoresist layer from a semiconductor wafer in a chamber, comprising a. stripping the photoresist layer from the wafer using a microwave-energy-generated plasma of a primary gas mixture without an RIE process;
- and b. determining an endpoint to the stripping of the photoresist layer by a determined change in visible light in the chamber.
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Abstract
A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined change in the visible light emanating from a chamber containing the wafer. A multi-step process of the present invention comprises the above method and a preliminary RIE-free microwave-energy-generated plasma that solubilizes polymer on walls of vias of the wafer. This multi-step process also comprises, following the exposing step, a cooling step, a cooling step with a temperature check, and a deglazing step. The deglazing step also uses an RIE-free microwave-energy-generated plasma. Specific gas mixtures for the respective plasmas are exemplified. Other embodiments of methods of the present invention are comprised of less steps, or a consolidation of such steps.
10 Citations
20 Claims
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1. A process for removal of a photoresist layer from a semiconductor wafer in a chamber, comprising
a. stripping the photoresist layer from the wafer using a microwave-energy-generated plasma of a primary gas mixture without an RIE process; - and
b. determining an endpoint to the stripping of the photoresist layer by a determined change in visible light in the chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method to treat a semiconductor wafer comprising:
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a. solubilizing polymer on via sidewalls of the wafer with a microwave-generated, fluorine-containing plasma at standard temperature;
b. ashing photoresist from a surface of the wafer with a microwave-generated plasma;
c. cooling the wafer for a period;
d. confirming the temperature of the wafer is below about 135 degrees Celsius; and
e. deglazing oxides from exposed metal surfaces on the wafer, comprising applying a microwave-generated, fluorine-containing plasma to the wafer. - View Dependent Claims (12, 13, 14, 15)
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16. A multi-step fabrication method for a semiconductor wafer comprising:
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a. contacting the wafer with a first microwave-generated plasma formed with a first gas mixture comprising oxygen and a fluorine-containing species, the wafer between about 30 and about 50 degrees Celsius, the first microwave-generated plasma being effective to water-solubilize polymer on side walls of etched features in the wafer;
b. contacting the wafer with a second microwave-generated plasma formed with a second gas mixture comprising oxygen and a nitrogen species, and no fluorine-containing gas, heating the wafer to about 250 degrees Celsius, the second microwave-generated plasma being effective to remove a photoresist layer from the wafer;
c. cooling the wafer; and
d. contacting the wafer with a third microwave-generated plasma formed with a third gas mixture comprising oxygen, a nitrogen species, and a fluorine-containing species, the wafer less than about 135 degrees Celsius, and the third microwave-generated plasma being effective to remove oxides from metal surfaces on the wafer. - View Dependent Claims (17, 18, 19, 20)
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Specification