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Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching

  • US 20060043062A1
  • Filed: 08/25/2004
  • Published: 03/02/2006
  • Est. Priority Date: 08/25/2004
  • Status: Active Grant
First Claim
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1. A process for removal of a photoresist layer from a semiconductor wafer in a chamber, comprising a. stripping the photoresist layer from the wafer using a microwave-energy-generated plasma of a primary gas mixture without an RIE process;

  • and b. determining an endpoint to the stripping of the photoresist layer by a determined change in visible light in the chamber.

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