Stacked photoelectric converter
First Claim
1. A stacked-layer type photoelectric conversion device comprising a plurality of photoelectric conversion units stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor, and an opposite conductivity-type layer in this order from a light incident side, wherein at least one of said opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light incident side and said one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to said front photoelectric conversion unit includes a silicon composite layer at least in a part thereof, and said silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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Accused Products
Abstract
In a stacked-layer type photoelectric conversion device, a plurality of photoelectric conversion units are stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side. At least one of the opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and the one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof. The silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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Citations
15 Claims
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1. A stacked-layer type photoelectric conversion device comprising a plurality of photoelectric conversion units stacked on a substrate, each of which includes a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor, and an opposite conductivity-type layer in this order from a light incident side, wherein
at least one of said opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light incident side and said one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to said front photoelectric conversion unit includes a silicon composite layer at least in a part thereof, and said silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
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14. An integrated type photoelectric conversion module, wherein
a first electrode layer, a plurality of photoelectric conversion unit layers and a second electrode layer successively stacked on a substrate are separated by a plurality of isolation grooves to form a plurality of photoelectric conversion cells, and the cells are electrically connected in series with each other via a plurality of connection grooves, each of said photoelectric conversion cells has a plurality of stacked photoelectric conversion units each including a one conductivity-type layer, a photoelectric conversion layer of substantially intrinsic semiconductor and an opposite conductivity-type layer in this order from a light-incident side, at least one of said opposite conductivity-type layer in a front photoelectric conversion unit arranged relatively closer to the light-incident side and said one conductivity-type layer in a back photoelectric conversion unit arranged adjacent to the front photoelectric conversion unit includes a silicon composite layer at least in a part thereof, and said silicon composite layer has a thickness of more than 20 nm and less than 130 nm and an oxygen concentration of more than 25 atomic % and less than 60 atomic %, and includes silicon-rich phase parts in an amorphous alloy phase of silicon and oxygen.
Specification