High frequency switch circuit

• US 20060044856A1
• Filed: 08/11/2005
• Published: 03/02/2006
• Est. Priority Date: 08/25/2004
• Status: Active Grant

• Current Assignee: QorTek, Inc.
• Original Assignee: QorTek, Inc.
• Inventors: Staron, John M., Knoll, William C., Bird, Ross W.
• Granted Patent: US 7,202,649 B2
• Time in Patent Office: Days
• US Class Current: 363/131
• CPC Class Codes: H02M 3/1588 comprising at least one synchronous rectifier element H02M3/1582, H02M3/1584 take precedence
• CPC Class Codes: H02M 7/538 in a push-pull configuration H02M7/5375 takes precedence ; with oscillating arrangements H02M7/53832, H02M7/53846
• CPC Class Codes: H03F 3/2173 of the bridge type
• CPC Class Codes: H03K 17/08142 in field-effect transistor switches
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A high-frequency switch circuit is presented. The invention includes a pair of switches, a pair of inductors, and a pair of diodes. Inductors are electrically connected in series between the switches which are thereafter electrically coupled to a power source. Switches are electrically connected to gate drivers so as to control and coordinate the cycling of switches between ON and OFF states. Inductors are also electrically connected to an output thereby communicating a voltage waveform thereto. In some embodiments, it may be desired to electrically connect the inductors to an output circuit to further modify the waveform. Diodes are likewise electrically connected about the switches and inductors. The present invention is applicable to a variety of circuits having a totem pole arrangement of switches sequentially cycled ON and OFF, examples including but not limited to half-bridge, full-bridge, and hybrid configurations.

Claims

1. A high frequency switch circuit comprising:

(a) a pair of switches electrically connected to a voltage source;

(b) a pair of inductors electrically connected in series between said switches to disconnect capacitance of one said switch from another said switch, said inductors electrically connected to an output to communicate a voltage waveform thereto; and

(c) a pair of diodes electrically connected about said switches and said isolation inductors to prevent said switches from being over driven by said inductors.

2. The high frequency switch circuit of claim 1, wherein said switches are each controlled by a gate driver.

3. The high frequency switch circuit of claim 1, wherein each said switch is a semiconductor device.

4. The high frequency switch circuit of claim 3, wherein said switches are each controlled by a gate driver.

5. The high frequency switch circuit of claim 3, wherein said semiconductor devices are a MOSFET, a FET, an IGBT, a BJT, or a HBT.

6. The high frequency switch circuit of claim 5, wherein said switches are each controlled via a gate driver.

7. The high frequency switch circuit of claim 1, further comprising:

(d) an output circuit electrically connected between said isolation inductors and

said output, said output circuit modifies said voltage waveform.

8. The high frequency switch circuit of claim 7, wherein said output circuit comprises:

(i) an inductor electrically connected in series between said isolation inductors and to said output; and

(ii) a capacitor electrically connected at a first end between said inductor and said output and a second end to a ground.