Flash memory device using semiconductor fin and method thereof

• US 20060044915A1
• Filed: 08/31/2005
• Published: 03/02/2006
• Est. Priority Date: 09/01/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kang, Sung-Taeg, Park, Ji-Hoon, Han, Jeong-Uk, Kim, Seong-Gyun, Kang, Sang-Woo, Yoon, Seung-Beom, Park, Sung-Woo, Seo, Bo-Young
• Granted Patent: US 7,285,820 B2
• Time in Patent Office: Days
• US Class Current: 365/222
• CPC Class Codes: H01L 29/42324 Gate electrodes for transistors with a floating gate
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7881 Programmable transistors with only two possible levels of programmation H01L29/7888 takes precedence
• CPC Class Codes: H10B 41/40 characterised by the peripheral circuit region
• CPC Class Codes: H10B 41/43 comprising only one type of peripheral transistor

Abstract

A flash memory device according to the present invention includes a semiconductor fin including a top surface and a side surface originated from different crystal planes. The flash memory device comprises: insulating layers having different thicknesses formed on a side surface and a top surface of the semiconductor fin, a storage electrode, a gate insulating layer and a control gate electrode sequentially formed on the insulating layers. A thin insulating layer enables charges to be injected or emitted through it, and a thick insulating layer increases a coupling ratio. Accordingly, it is possible to increase an efficiency of a programming or an erase operation of a flash memory device.

Claims

1. A flash memory device comprising:

a semiconductor fin including a top surface and a side surface originated from different crystal planes;

a first insulating layer formed on the side surface and a second insulating layer formed on the top surface;

a storage electrode formed on the first insulating layer and the second insulating layer;

a gate insulating layer formed on the storage electrode; and

a control gate electrode formed on the gate insulating layer.

2. The device of claim 1, wherein the storage electrode is a floating gate electrode, and the gate insulating layer has a stacked structure in which an oxide layer, a nitride layer and an oxide layer are sequentially stacked.

3. The device of claim 1, wherein the storage electrode is a nitride layer, and the gate insulating layer is an oxide layer.

4. The device of claim 1, wherein the first insulating layer and the second insulating layer have thicknesses so that charges are injected or emitted not through a relatively thick insulating layer of the first insulating layer and the second insulating layer but through a relatively thin insulating layer of the first and second insulating layer at a programming or an erase operation of the flash memory device.

5. The device of claim 4, wherein the first insulating layer and the second insulating layer have thicknesses so that charges are injected or emitted not through the first insulating layer but through the second insulating layer at a programming or an erase operation of the flash memory device.

6. The device of claim 4, wherein a relatively thick insulating layer of the first insulating layer and the second insulating layer is 1.3 through 1.4 times as thick as a relatively thin insulating layer of the first and second insulating layer.

7. The device of claim 1, wherein the top surface is originated from a crystal plane {100}, and the side surface is originated from a crystal plane {110}.

8. The device of claim 7, wherein the first insulating layer is thicker than the second insulating layer.

9. The device of claim 1, wherein the top surface is originated from a crystal plane {110}, and the side surface is originated from a crystal plane {100}.

10. The device of claim 8, wherein the second insulating layer is thicker than the first insulting layer.

11. The device of claim 1, wherein the top surface is originated from a crystal plane (abc), and the side surface is originated from a crystal plane (hkl),

wherein a, b and c are integers except 0 at the same time, and h, k and l are integers except 0 at the same time and

wherein the set of a, b and c and the set of h, k and l have, at maximum, only two integers in common.

12. A flash memory device comprising:

a semiconductor fin including a top surface and a side surface originated from different crystal planes;

a first thermal oxide layer and a second thermal oxide layer with different thicknesses formed on the side surface and the top surface;

a floating gate electrode formed on the first thermal oxide layer and the second thermal oxide layer;

a gate insulating layer formed on the floating gate electrode; and

a control gate electrode formed on the gate insulating layer.

13. The device of claim 12, wherein the first thermal oxide layer is thicker than the second thermal oxide layer.

14. The device of claim 13, wherein the top surface is originated from a crystal plane {100}, and the side surface is originated from a crystal plane {110}.

15. The device of claim 14, wherein the first thermal oxide layer and the second thermal oxide layer have thicknesses so that charges are injected or emitted not through the first thermal oxide layer but through the second thermal oxide layer at a programming or an erase operation of the flash memory device.

16. The device of claim 12, wherein the second thermal oxide layer is thicker than the first thermal oxide layer.

17. The device of claim 16, wherein the top surface is originated from a crystal plane {110}, and the side surface is originated from a crystal plane {100}.

18. The device of claim 17, wherein the first thermal oxide layer and the second thermal oxide layer have thicknesses so that charges are injected or emitted not through the second thermal oxide layer but through the first thermal oxide layer at a programming or an erase operation of the flash memory device

19. The device of claim 12, wherein a relatively thick thermal oxide layer of the first thermal oxide layer and the second thermal oxide layer is 1.3 through 1.4 times as thick as a relatively thin thermal oxide layer of the first and second insulating layer.

20-29. -29. (canceled)

30. A semiconductor device comprising:

a first semiconductor fin including a top surface and a side surface of a different crystal plane;

a second semiconductor fin including a top surface of a crystal plane equal to the top surface of the first semiconductor fin and a side surface of a crystal plane which is the same as or a different side surface of the first semiconductor fin;

a first thermal oxide layer and a second thermal oxide layer formed on a top surface and a side surface of the first semiconductor fin, respectively;

a floating gate electrode formed on the first thermal oxide layer and the second thermal oxide layer;

a first gate insulating layer and a control gate electrode, which are sequentially formed on the floating gate electrode;

a second gate insulating layer formed on the top surface and the side surface of the second semiconductor fin; and

a gate electrode formed on the second gate insulting layer.

31. The device of claim 30, wherein a crystal plane of the top surface of the first semiconductor fin is {100}, and a crystal plane of the side surface is {110}, and

wherein a crystal plane of the top surface of the second semiconductor fin is {100}, and a crystal plane of the side surface is {100}.

32. The device of claim 30, wherein a crystal plane of the top surface of the first semiconductor fin is {110}, and a crystal plane of the side surface is {100}, and

wherein a crystal plane of the top surface of the second semiconductor fin is {110}, and a crystal plane of the side surface is {100}.

33. The device of claim 30, wherein a thickness of the first thermal oxide layer is thicker than the second thermal oxide layer, and a thickness of the second gate insulating layer is the same as the first thermal oxide layer.

34. The device of claim 30, wherein a thickness of the first thermal oxide layer is thicker than the second thermal oxide layer, and

wherein a thickness of a second gate insulating layer formed on a top surface of the second semiconductor fin is the same as that of the second thermal oxide layer, and a thickness of the second gate insulting layer formed on the side surface of the second semiconductor fin is the same as that of the first insulating layer.