In-situ critical dimension measrument

• US 20060046323A1
• Filed: 02/07/2005
• Published: 03/02/2006
• Est. Priority Date: 08/31/2004
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Tao, Hun-Jan, Chiu, Yuan-Hung, Wang, Shiang-Bau, Tsai, Chao-Tzung
• Granted Patent: US 7,301,645 B2
• Time in Patent Office: Days
• US Class Current: 438/14
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps

Abstract

A method of monitoring a critical dimension of a structural element in an integrated circuit is provided comprising the following steps: collecting an optical interference endpoint signal produced during etching one or more layers to form the structural element; and determining based upon the optical interference endpoint signal the critical dimension of the structural element.

Claims

1. A method of monitoring a critical dimension of a structural element in an integrated circuit, comprising the following steps:

(a) collecting at least one optical interference endpoint signal produced during etching one or more layers to form said structural element; and

(b) determining based upon said at least one optical interference endpoint signal the critical dimension of said structural element.

2. The method of claim 1, wherein said interference endpoint signal comprises an oscillating signal with a peak or trough amplitude that changes during said etching of said one or more layers, wherein the determining step comprises the step of analyzing at least one peak or trough from said oscillating signal.

3. The method of claim 2, wherein said oscillating signal has at least a first and second peaks or troughs chronologically, and said analyzing step comprises comparing said second peak or trough to another portion of said oscillating signal.

4. The method of claim 3, wherein said comparing step comprises comparing said second peak to said first peak and/or to a trough defined between said first and second peaks.

5. The method of claim 1, wherein said determining step comprises comparing data retrieved from said optical interference endpoint signal against a collection of optical interference endpoint data correlated to structural element critical dimensions.

6. The method of claim 5, wherein said data retrieved from said optical interference endpoint signal are normalized to account for the thickness of said one or more layers.

7. The method of claim 1, wherein said collecting step comprises the following steps:

illuminating with light an area including at least a portion of said one or more layers during etching thereof to form said structural element; and

collecting reflected light from said area.

8. The method of claim 7, wherein said at least one optical interference endpoint comprises an interference signal having a wavelength between about 550-700 nm.

9. The method of claim 1, wherein said one or more layers comprises a polysilicon layer and said structural element comprises a gate element.

10. The method of claim 1, wherein said determining and collecting steps are performed for a plurality of structural elements on a wafer for a process run, the method further comprising the step of calculating critical dimension variation for said process run.

11. The method of claim 10, further comprising controlling via a feedback loop an etch process based at least in part on said calculated critical dimension variation.

12. The method of claim 1, wherein said at least one optical interference endpoint signal comprises a plurality of optical interference endpoint signals at different wavelengths, and wherein said determining step (b) is based upon said plurality of optical interference endpoint signals.

13. A method of monitoring a dimension of structural element in an integrated circuit, comprising the following steps:

(a) collecting at last one optical interference endpoint signal produced during monitoring of etching one or more layers to form a structural element in said integrated circuit, wherein said interference endpoint signal comprises an oscillating signal with a peak or trough amplitude that changes during said etching of said one or more layers; and

(b) determining based upon said optical interference endpoint signal the dimension of said structural element, wherein said determining step comprises comparing data retrieved from said optical interference endpoint signal against a library of optical interference endpoint data correlated to structural element dimensions.

14. The method of claim 13, wherein the determining step comprises the step of analyzing at least one peak or trough from said oscillating signal.

15. The method of claim 14, wherein said oscillating signal has a plurality of peaks or troughs including at least a first and second peaks or troughs chronologically, and said analyzing step comprises comparing at least one peak or trough from said plurality of peaks or troughs to another portion of said oscillating signal.

16. The method of claim 13, wherein said data retrieved from said optical interference endpoint signal are normalized to account for the thickness of said one or more layers.

17. The method of claim 13, wherein said collecting step comprises the following steps:

illuminating with light an area including at least a portion of said one or more layers during etching thereof to form said structural element; and

collecting reflected light from said area.

18. The method of claim 17, wherein said at least one optical interference endpoint signal has a wavelength between about 550-700 nmn.

19. The method of claim 13, wherein said at least one optical interference endpoint signal comprises a plurality of optical interference endpoint signals at different wavelenths, and wherein said determining step (b) is based upon said plurality of optical interference endpoint signals.

20. A system for monitoring a dimension of a structural element of an integrated circuit, comprising:

(a) an etch tool comprising an etch depth monitoring tool comprising an optical source and at least one photodetector for collecting at least one optical interference endpoint signal produced during monitoring of etching one or more layers to form a structural element in said integrated circuit, wherein said at least one interference endpoint signal comprises an oscillating signal with a peak or trough amplitude that changes during said etching of said one or more layers; and

(b) means for comparing data retrieved from said at least one optical interference endpoint signal against a library of optical interference endpoint data correlated to structural element dimensions, whereby said dimension is determined.