Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same
First Claim
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1. A method for fabricating an organic thin film transistor comprising:
- forming a gate electrode on a substrate;
forming a gate insulating layer on the substrate including the gate electrode;
forming an organic active pattern on the gate insulating layer using a rear exposing process; and
forming source and drain electrodes on the organic active pattern.
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Abstract
A method for fabricating an organic thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the substrate including the gate electrode, forming an organic active pattern on the gate insulating layer using a rear exposing process, and forming source and drain electrodes on the organic active pattern.
33 Citations
29 Claims
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1. A method for fabricating an organic thin film transistor comprising:
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forming a gate electrode on a substrate;
forming a gate insulating layer on the substrate including the gate electrode;
forming an organic active pattern on the gate insulating layer using a rear exposing process; and
forming source and drain electrodes on the organic active pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for fabricating a liquid crystal display device comprising:
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forming a gate electrode on a first substrate;
forming a gate insulating layer on the first substrate including the gate electrode;
forming an organic active pattern on the gate insulating layer using a rear exposing process;
forming source and drain electrodes on the organic active pattern;
attaching the first substrate to a second substrate with a space therebetween; and
forming a liquid crystal layer in the space between the first and second substrates. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. An organic thin film transistor comprising:
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a gate electrode on a first substrate;
a gate insulating layer on the first substrate covering the gate electrode;
an organic active layer on the gate insulating layer corresponding to the gate electrode;
an inorganic pattern on the organic active layer; and
source and drain electrodes on the inorganic pattern, the source and drain electrodes electrically connected to the organic active layer. - View Dependent Claims (26, 27, 28, 29)
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Specification