Damascene process using different kinds of metals
First Claim
1. A damascene process comprising:
- stacking an interlayer dielectric on a semiconductor substrate;
patterning the interlayer dielectric to form a groove and a contact at a bottom of the groove to expose the semiconductor substrate;
conformally forming a first barrier metal layer;
conformally forming a first seed layer;
selectively forming a first conductive layer to fill the contact hole; and
forming a second conductive layer to fill the groove.
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Abstract
The present invention is directed to a damascene process using different kinds of metals is provided. An interlayer dielectric is formed to cover a semiconductor substrate. A contact hole is formed to expose the semiconductor substrate through the interlayer dielectric. A groove is formed to overlap the contact hole. A first barrier metal layer is conformally formed. A first seed layer is conformally formed. A first conductive layer is formed to fill a contact hole below the groove. A second conductive layer is formed to fill the groove. According to the damascene process, a CMP process for a tungsten layer is not needed such that total process cost is reduced and the overall general process is simplified.
56 Citations
16 Claims
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1. A damascene process comprising:
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stacking an interlayer dielectric on a semiconductor substrate;
patterning the interlayer dielectric to form a groove and a contact at a bottom of the groove to expose the semiconductor substrate;
conformally forming a first barrier metal layer;
conformally forming a first seed layer;
selectively forming a first conductive layer to fill the contact hole; and
forming a second conductive layer to fill the groove. - View Dependent Claims (3, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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- 2. The damascene process of claim 2, wherein the selective formation of the first conductive layer is done using electro-plating.
Specification