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Porous substrate and its manufacturing method, and gan semiconductor multilayer substrate and its manufacturing method

  • US 20060046511A1
  • Filed: 06/26/2003
  • Published: 03/02/2006
  • Est. Priority Date: 06/28/2002
  • Status: Active Grant
First Claim
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1. A porous substrate, comprising a plurality of porous layers thereon, wherein the average opening diameter of pores in a porous layer of said plurality of porous layers positioned in an outermost surface is smaller than the average diameter of pores in a porous layer of said plurality of porous layers positioned on a substrate side relative to said porous layer positioned in said outermost surface.

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