Selective etching of oxides to metal nitrides and metal oxides
First Claim
1. A method for selectively etching an oxide in or on a substrate in the presence of metal oxides and/or metal nitrides comprising exposing the oxide to a substantially non-aqueous etchant said etchant comprising a source of fluorine ions, said substantially non-aqueous etchant having a pH of less than about 4.0.
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Abstract
A method is provided for selectively etching native oxides or other contaminants to metal nitrides and metal oxides during manufacture of a semiconductor device. he method utilizes a substantially non-aqueous etchant which includes a source of fluorine ions. In a preferred embodiment, the etchant comprises H2SO4 and HF. The etchant selectively etches native and doped oxides or other contaminants without excessively etching metal nitrides or metal oxides on the substrate or on adjacent exposed surfaces.
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Citations
10 Claims
- 1. A method for selectively etching an oxide in or on a substrate in the presence of metal oxides and/or metal nitrides comprising exposing the oxide to a substantially non-aqueous etchant said etchant comprising a source of fluorine ions, said substantially non-aqueous etchant having a pH of less than about 4.0.
Specification