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Method for manufacturing a silicon structure

  • US 20060048702A1
  • Filed: 04/01/2005
  • Published: 03/09/2006
  • Est. Priority Date: 09/08/2004
  • Status: Active Grant
First Claim
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1. A method of forming a single crystal silicon structure comprising:

  • preparing a single crystal silicon surface that is substantially free of silicon oxide;

    heating the silicon surface to a first temperature of no more than about 350°

    C. under a first ambient and within a first pressure range;

    further heating the silicon surface from the first temperature to a first silicon deposition temperature between about 350°

    C. and about 530°

    C. under a second ambient, the second ambient being maintained within a second pressure range, the second ambient including a silicon source gas and a non-oxidizing carrier gas; and

    maintaining the silicon surface at the first silicon deposition temperature under the second ambient for a deposition period sufficient to form a first epitaxial single crystal silicon region having a first thickness on the silicon surface.

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