Method for manufacturing a silicon structure

• US 20060048702A1
• Filed: 04/01/2005
• Published: 03/09/2006
• Est. Priority Date: 09/08/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Jong Wook, Park, Jae Young, Shin, Yu Gyun, Son, Yong Hoon, Yeo, Cha Dong
• Granted Patent: US 7,141,116 B2
• Time in Patent Office: Days
• US Class Current: 117/94
• CPC Class Codes: C30B 1/023 from solids with amorphous structure

Abstract

Provided are improved methods for forming silicon films, particularly single-crystal silicon films from amorphous silicon films in which a single-crystal silicon substrate is prepared by removing any native oxide, typically using an aqueous HF solution, and placed in a reaction chamber. The substrate is then heated from about 350° C. to a first deposition temperature under a first ambient to induce single-crystal epitaxial silicon deposition primarily on exposed silicon surfaces. The substrate is then heated to a second deposition temperature under a second ambient that will maintain the single-crystal epitaxial silicon deposition on exposed single-crystal silicon while inducing amorphous epitaxial silicon deposition on insulating surfaces. The amorphous epitaxial silicon can then be converted to single-crystal silicon using a solid phase epitaxy process to form a thin, high quality silicon layer. The first and second ambients include at least one silicon source gas and may include a non-oxidizing carrier gas.

Claims

1. A method of forming a single crystal silicon structure comprising:

preparing a single crystal silicon surface that is substantially free of silicon oxide;

heating the silicon surface to a first temperature of no more than about 350°

C. under a first ambient and within a first pressure range;

further heating the silicon surface from the first temperature to a first silicon deposition temperature between about 350°

C. and about 530°

C. under a second ambient, the second ambient being maintained within a second pressure range, the second ambient including a silicon source gas and a non-oxidizing carrier gas; and

maintaining the silicon surface at the first silicon deposition temperature under the second ambient for a deposition period sufficient to form a first epitaxial single crystal silicon region having a first thickness on the silicon surface.

2. A method of forming a single crystal silicon structure according to claim 1, wherein:

the silicon source gas includes at least one compound selected from a group consisting of SiH_xZ_y, wherein Z is selected from a group consisting of the halogens and wherein x and y are integers satisfying the expressions 0≦

x≦

4, 0≦

y≦

4 and x+y=4;

Si₂H_x′

Z_y′

, wherein x′ and

y′

are integers satisfying the expressions 0≦

x′

≦

6, 0≦

y′

≦

6 and x′

+y′

=6; and

Si₃H_x″

Z_y″

, wherein x″ and

y″

are integers satisfying the expressions 0≦

x″

≦

8, 0≦

y″

≦

8 and x″

+y″

=8

the carrier gas includes at least one gas selected from a group consisting of nitrogen, argon and helium, wherein a volume ratio between the silicon source gas and the carrier gas is selected to provide an acceptable deposition uniformity and acceptable deposition rate.

3. A method of forming a single crystal silicon structure according to claim 2, wherein:

the volume ratio between the silicon source gas and the carrier gas is selected to be between about 1;

1 and about 1;

0.

4. A method of forming a single crystal silicon structure according to claim 2, wherein:

the silicon source gas includes at least one compound selected from a group consisting of SiH₄, SiH₃Cl, SiH₂Cl₂, SiHCl₃, SiCl₄ and Si₂H₆;

the carrier gas is nitrogen; and

the volume ratio between the silicon source gas and the carrier gas is between about 1;

1 and about 1;

0.

5. A method of forming a single crystal silicon structure according to claim 4, wherein:

the silicon source gas is SiH₄;

the carrier gas is nitrogen;

the volume ratio between the silicon source gas and the carrier gas is between about 1;

1 and about 1000;

1; and

the second pressure range is between about 200 mTorr and about 600 mTorr.

6. A method of forming a single crystal silicon structure according to claim 5, wherein:

the second pressure range is between about 300 mTorr and about 500 mTorr.

7. A method of forming a single crystal silicon structure according to claim 1, wherein:

preparing the single crystal silicon surface includes removing native oxide from the silicon surface and forming a hydrogen passivation layer on the silicon surface.

8. A method of forming a single crystal silicon structure according to claim 7, wherein:

the native oxide is removed from the silicon surface using an aqueous HF solution or a plasma etch process.

9. A method of forming a single crystal silicon structure comprising:

preparing a single crystal silicon surface that is substantially free of silicon oxide and an insulator surface adjacent the silicon surface;

heating the silicon surface and the insulator surface to a first temperature of no more than about 350°

C. under a first ambient maintained within a first pressure range;

further heating the silicon surface from the first temperature to a first silicon deposition temperature between about 350°

C. and about 530°

C. under a second ambient, the second ambient being maintained within a second pressure range, the second ambient including a silicon source gas and a non-oxidizing carrier gas; and

maintaining the silicon surface at the first silicon deposition temperature under the second ambient for a deposition period sufficient to form a first epitaxial single crystal silicon region having a first thickness on the silicon surface;

further heating the silicon surface from the first silicon deposition temperature to a second silicon deposition temperature of at least about 530°

C. under a third ambient, the third ambient being maintained within a third pressure range, the third ambient including a silicon source gas and a non-oxidizing carrier gas;

maintaining the silicon surface and insulator surface at the second silicon deposition temperature under the third ambient for a deposition period sufficient to form, in a substantially simultaneous manner, a second epitaxial single crystal silicon region having a second thickness on the first epitaxial single crystal silicon region and a substantially amorphous silicon layer having a third thickness on the insulator surface; and

further heating the amorphous silicon layer to an annealing temperature sufficient to induce solid phase epitaxy and convert substantially the entire amorphous silicon layer to single crystal silicon and thereby form a single crystal silicon layer.

10. A method of forming a single crystal silicon structure according to claim 9, wherein:

the single crystal silicon surface and the insulator surface are substantially coplanar.

11. A method of forming a single crystal silicon structure according to claim 9, further comprising:

planarizing the single crystal silicon layer.

12. A method of forming a single crystal silicon structure comprising:

preparing a single crystal silicon surface;

depositing a layer of an insulating material on the silicon surface;

forming an opening through the insulating material to expose a portion of the single crystal silicon surface, the exposed portion being substantially free of silicon oxide;

performing a selective epitaxial process to fill the opening with a single crystal silicon plug, the silicon plug having an upper surface substantially free of silicon oxide and generally adjacent a top surface of the insulating material;

heating the silicon plug to a first silicon deposition temperature between about 350°

C. and about 530°

C. under a first ambient, the first ambient being maintained within a first pressure range, the first ambient including a silicon source gas and a non-oxidizing carrier gas;

maintaining the silicon plug at the first silicon deposition temperature under the first ambient for a deposition period sufficient to form a first epitaxial single crystal silicon region having a first thickness on the upper surface of the silicon plug;

further heating the silicon plug to a second silicon deposition temperature of at least about 530°

C. under a second ambient, the second ambient being maintained within a second pressure range, the second ambient including a silicon source gas and a non-oxidizing carrier gas;

maintaining the silicon surface and insulator surface at the second silicon deposition temperature under the second ambient for a deposition period sufficient to form, in a substantially simultaneous manner, a second epitaxial single crystal silicon region having a second thickness on the first epitaxial single crystal silicon region and a substantially amorphous silicon layer having a third thickness on the insulator surface; and

further heating the amorphous silicon layer to an annealing temperature sufficient to induce solid phase epitaxy and convert substantially the entire amorphous silicon layer to single crystal silicon and form a single crystal silicon layer.

13. A method of forming a single crystal silicon structure according to claim 12, wherein:

the upper surface of the silicon plug is substantially coplanar with the top surface of the insulating material.

14. A method of forming a single crystal silicon structure according to claim 13, further comprising:

maintaining the selective epitaxial process for a period sufficient to overfill the opening; and

removing an upper portion of the silicon plug above the top surface of the insulating material to form a planarized surface.

15. A method of forming a multi-layer single crystal silicon structure comprising:

repeatedly

preparing a single crystal silicon surface;

depositing a layer of an insulating material on the prepared single crystal silicon surface;

forming an opening through the insulating material to expose a portion of the prepared single crystal silicon surface, the exposed portion being substantially free of silicon oxide;

performing a selective epitaxial process to fill the first opening with a single crystal silicon plug, the single crystal silicon plug having an upper surface generally adjacent a top surface of the insulating material;

heating the single crystal silicon plug to a first silicon deposition temperature between about 350°

C. and about 530°

C. under an ambient maintained within a first pressure range and including a silicon source gas and a non-oxidizing carrier gas; and

maintaining the single crystal silicon plug at the first silicon deposition temperature under the first ambient for a deposition period sufficient to form a first epitaxial single crystal silicon region on the upper surface of the first silicon plug;

further heating the single crystal silicon plug to a second silicon deposition temperature of at least about 530°

C. under a second ambient maintained within a second pressure range and including a silicon source gas and a non-oxidizing carrier gas;

maintaining the single crystal silicon plug and the insulator surface at the second silicon deposition temperature under the second ambient for a deposition period sufficient to form, in a substantially simultaneous manner, a second epitaxial single crystal silicon region on the first epitaxial single crystal silicon region and a substantially amorphous silicon layer on the first insulator surface; and

further heating the substantially amorphous silicon layer to an annealing temperature sufficient to induce solid phase epitaxy and convert substantially the entire amorphous silicon layer to single crystal silicon and thereby form a single crystal silicon layer, the single crystal silicon layer being suitable for serving as a next single crystal silicon surface;

to thereby form a multi-layer single crystal silicon structure.

16. A method of forming a multi-layer single crystal silicon structure according to claim 15, further comprising:

planarizing the single crystal silicon layer before preparing the surface for depositing the insulating material.

17. A method of forming a multi-layer single crystal silicon structure according to claim 15, further comprising:

forming a first single crystal silicon layer having a first thickness; and

forming a second single crystal silicon layer having a second thickness, wherein the first and second single crystal silicon layers are separated by an insulating layer and connected by single crystal silicon plugs formed through the insulating layer.

18. A method of forming a multi-layer single crystal silicon structure according to claim 17, wherein:

a ratio between the first thickness and the second thickness is within a range of 3;

1 to 1;

3.

19. A method of forming a single crystal silicon structure comprising:

preparing a first single crystal silicon surface;

depositing a layer of a first insulating material on the first silicon surface;

forming a first opening through the first insulating material to expose a portion of the first single crystal silicon surface, the exposed portion being substantially free of silicon oxide;

heating the exposed portion of the first silicon surface to a first silicon deposition temperature between about 350°

C. and about 530°

C. under a first ambient, the first ambient being maintained within a first pressure range and including a silicon source gas and a non-oxidizing carrier gas; and

maintaining the first silicon surface at the first silicon deposition temperature under the first ambient for a deposition period sufficient to form a first epitaxial single crystal silicon region having a first thickness on the exposed portion of the first silicon surface;

further heating the first silicon surface and the first insulating material to a second silicon deposition temperature of at least about 500°

C. under a second ambient, the second ambient being maintained within a second pressure range, the second ambient including a silicon source gas and a non-oxidizing carrier gas; and

maintaining the first silicon surface and the first insulating material at the second silicon deposition temperature under the second ambient for a deposition period sufficient to form, in a substantially simultaneous manner, a second epitaxial single crystal silicon region having a second thickness on the first epitaxial single crystal silicon region and a first substantially polycrystalline silicon layer having a third thickness on the first insulating material whereby the opening is substantially filled with polycrystalline silicon.

20. A method of forming a single crystal silicon structure according to claim 19, further comprising:

removing an upper portion of the polycrystalline silicon layer to form a planarized surface.