Method and apparatus for determining an etch property using an endpoint signal
First Claim
1. A plasma processing system for etching a layer on a substrate comprising:
- a process chamber;
a diagnostic system coupled to said process chamber and configured to measure at least one endpoint signal; and
a controller coupled to said diagnostic system and configured to determine at least one of an etch rate and an etch rate uniformity of an etching process in said processing chamber from said at least one endpoint signal and a thickness of said layer, wherein said thickness comprises at least one of a minimum thickness, a maximum thickness, a mean thickness, and a thickness range.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.
-
Citations
43 Claims
-
1. A plasma processing system for etching a layer on a substrate comprising:
-
a process chamber;
a diagnostic system coupled to said process chamber and configured to measure at least one endpoint signal; and
a controller coupled to said diagnostic system and configured to determine at least one of an etch rate and an etch rate uniformity of an etching process in said processing chamber from said at least one endpoint signal and a thickness of said layer, wherein said thickness comprises at least one of a minimum thickness, a maximum thickness, a mean thickness, and a thickness range. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 42, 43)
-
-
20. An in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system comprising:
-
providing a thickness of said layer, wherein said thickness comprises at least one of a minimum thickness, a maximum thickness, a mean thickness, and a thickness range;
etching said layer on said substrate;
measuring at least one endpoint signal using a diagnostic system coupled to said plasma processing system, wherein said at least one endpoint signal comprises an endpoint transition; and
determining said etch rate from a ratio of said thickness to a difference between a time during said endpoint transition and a starting time of said etching. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41)
-
Specification