Tunable segmented distributed bragg reflector for linear optical amplifier

• US 20060050364A1
• Filed: 09/03/2004
• Published: 03/09/2006
• Est. Priority Date: 09/03/2004
• Status: Active Grant

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Verma, Ashish K., Ratowsky, Richard P., Francis, Daniel A.
• Granted Patent: US 7,099,075 B2
• Time in Patent Office: Days
• US Class Current: 359/333
• CPC Class Codes: H01S 2301/04 Gain spectral shaping, flattening
• CPC Class Codes: H01S 5/2027 Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30
• CPC Class Codes: H01S 5/5063 operating above threshold
• CPC Class Codes: H01S 5/5072 Gain clamping, i.e. stabilisation by saturation using a further mode or frequency

Abstract

Systems and methods for tuning a DBR stack for an optical amplifier. The DBR layers in a mirror of the optical amplifier have a duty cycle that can be altered to tune a location of a channel drop in a gain spectrum. In addition to changing the duty cycle, the DBR stacks can be segmented. The segmented DBR stacks and/or the selected duty cycle tunes a location of a channel drop outside of a range of wavelengths of interest.

Claims

1. An optical amplifier comprising:

a substrate;

a first Distributed Bragg Reflector (DBR) stack arranged over the substrate, the first DBR stack including a plurality of mirror pairs each having a first layer and a second layer, wherein a duty cycle of each mirror pair is selected such that a phase shift of the first layer is less than or greater than 90 degrees;

an active region formed on the first DBR stack, wherein the duty cycle of each mirror pair is selected such that an amplifier mode does not couple to the first DBR stack; and

a second DBR stack formed on the active region.

2. An optical amplifier as defined in claim 1, wherein each mirror layer further comprises a layer of InP and a layer of InGaAsP.

3. An optical amplifier as defined in claim 1, wherein the duty cycle is in a range of 1% to 20%.

4. An optical amplifier as defined in claim 1, wherein the first DBR stack includes a plurality of spacer layers such that the plurality of mirror pairs is divided into segments.

5. An optical amplifier as defined in claim 4, wherein each spacer layer comprises a layer of InP having a thickness that is a multiple of ½

wave and imparting a phase shift equal to a multiple of 180 degrees

6. An optical amplifier as defined in claim 4, wherein each segment includes a particular number of mirror pairs in a range from 9 to 15 mirror pairs.

7. An optical amplifier as defined in claim 4, wherein the first DBR stack includes segments in a range from 2 to 5 segments.

8. An optical amplifier as defined in claim 1, wherein a phase shift of each mirror pair is 180 degrees.

9. An optical amplifier as defined in claim 1, wherein the second DBR stack includes a plurality of mirror pairs each having a first layer and a second layer, wherein a duty cycle of each mirror pair in the second DBR stack is selected such that a phase shift of the first layer is less than or greater than 90 degrees.

10. An optical amplifier comprising:

a substrate;

a first DBR stack formed on the substrate, wherein the first DBR stack comprises;

a plurality of mirror pair segments, each mirror pair in each mirror pair segment imparting a phase shift of 180 degrees and each mirror pair having a duty cycle such that a first layer of each mirror pair imparts a phase shift of less than 90 degrees and a second layer of each mirror pair imparts a phase shift of greater than 90 degrees;

an active region formed on the first DBR stack, wherein the duty cycle of each mirror pair is configured to tune a channel drop outside of a particular range of wavelengths; and

a second DBR stack formed on the active region.

11. An optical amplifier as defined in claim 10, wherein the first layer is InP and the second layer is InGaAsP.

12. An optical amplifier as defined in claim 10, wherein the first layer is InGaAsP and the second layer is InP.

13. An optical amplifier as defined in claim 10, wherein the first mirror stack comprises a plurality of spacer layers located at least between each mirror pair segment.

14. An optical amplifier as defined in claim 10, wherein each mirror pair segment includes a number of mirror pairs in a range from 9 to 15 mirror pairs.

15. An optical amplifier as defined in claim 10, wherein the first layer has an optical path that is less than ¼

wave.

16. An optical amplifier as defined in claim 10, wherein the duty cycle is selected to move a location of a channel drop.

17. An optical amplifier as defined in claim 10, wherein the duty cycle is in a range of 1% to 20%.

18. A method for tuning a location of a channel drop in a gain spectrum of an optical amplifier, the method comprising:

selecting a duty cycle for a plurality of mirror pairs such that a channel drop falls outside of a selected wavelength range;

forming first DBR layer that includes a plurality of mirror segments on a substrate, each mirror segment including one or more of the plurality of mirror pairs and a spacer layer;

forming an active region on the plurality of mirror segments; and

forming a second DBR stack on the active region.

19. A method as defined in claim 18, further comprising:

forming a first layer of each mirror pair such that a phase shift of the first layer is less than 90 degrees; and

forming a second layer of each mirror pair such that a phase shift of the second layer is greater than 90 degrees.

20. A method as defined in claim 19, further comprising forming each mirror pair such that a phase shift of each mirror pair is 180 degrees.

21. A method as defined in claim 18, wherein the first layer is InP and the second layer is InGaAsP.

22. A method as defined in claim 18, wherein the first layer is InGaAsP and the second layer is InP.

23. A method as defined in claim 18, further comprising angling a first facet and a second facet of the optical amplifier to limit mode reflections in the active region.

24. A method as defined in claim 18, wherein each mirror segment comprises a number of mirror pairs in a range of 9 to 15.

25. A method as defined in claim 18, wherein the duty cycle is in a range of 1% to 20%.

26. An optical amplifier comprising:

a substrate;

a first DBR stack formed on the substrate, wherein the first DBR stack comprises;

a plurality of mirror segments;

one or more mirror pairs in each mirror segment, wherein each mirror pair has a duty cycle such that a phase shift for each mirror pair is 180 degrees while the phase shift for one layer in at least one mirror pair is less than 90 degrees; and

one or more spacer layers formed between the plurality of mirror segments;

an active region formed on the first DBR stack; and

a second DBR stack formed on the active region.

27. An optical amplifier as defined in claim 26, wherein a duty cycle of a first mirror pair in the first DBR stack is different from a duty cycle of a second mirror pair in the first DBR stack.

28. An optical amplifier as defined in claim 26, wherein a duty cycle of mirror pairs in the first DBR stack is not constant.

29. An optical amplifier as defined in claim 26, wherein a first segment in the first DBR stack has a first number of mirror pairs and a second segment in the first DBR stack has a second number of mirror pairs.

30. An optical amplifier as defined in claim 26, wherein the second DBR stack comprises:

a plurality of mirror segments;

one or more mirror pairs in each mirror segment, wherein each mirror pair has a duty cycle such that a phase shift for each mirror pair is 180 degrees while the phase shift for one layer in at least one mirror pair is less than 90 degrees; and

one or more spacer layers formed between the plurality of mirror segments;

31. An optical amplifier as defined in claim 26, wherein each spacer layer has a thickness that is a multiple of ½

wave and imparts a phase shift equal to a multiple of 180 degrees.