Rapid thermal processing apparatus and method of manufacture of semiconductor device

• US 20060051077A1
• Filed: 01/11/2005
• Published: 03/09/2006
• Est. Priority Date: 08/24/2004
• Status: Active Grant

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Kubo, Tomohiro
• Granted Patent: US 7,283,734 B2
• Time in Patent Office: Days
• US Class Current: 392/416
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring

Abstract

A rapid thermal processing apparatus comprises a processing chamber which subjects a semiconductor substrate to rapid thermal processing. A substrate support part is arranged in the processing chamber and supports the substrate. A lamp part optically irradiates the substrate supported by the substrate support part and heats the substrate. A thermo sensor is provided to measure a temperature of the substrate. A temperature computing part computes the temperature of the substrate based on an output signal of the thermo sensor. A control part controls an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part. In this apparatus, the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a measured reflectivity of a surface of the substrate.

Claims

1. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a lamp part optically irradiating the substrate supported by the substrate support part and heating the substrate;

a thermo sensor provided to measure a temperature of the substrate;

a temperature computing part computing the temperature of the substrate based on an output signal of the thermo sensor; and

a control part controlling an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part,

wherein the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a reflectivity of a surface of the substrate which is measured beforehand.

5. The rapid thermal processing apparatus according to claim 1 wherein the reflectivity of the front surface of the substrate is measured beforehand within the processing chamber in a state before the substrate is heated in the processing chamber to reach a desired target temperature, and the control part corrects the control parameter of the irradiation intensity based on the measured reflectivity.

6. The rapid thermal processing apparatus according to claim 1 wherein the reflectivity of the front surface of the substrate is measured beforehand as being a value of the irradiation intensity of the lamp part needed to retain the substrate at a first temperature lower than a desired target temperature for a fixed time in a state where the substrate is heated in the processing chamber for the fixed time at the first temperature, and the control part corrects the control parameter of the irradiation intensity based on the value of the irradiation intensity.

7. The rapid thermal processing apparatus according to claim 1 wherein the control part corrects the control parameter of the irradiation intensity based on a correlation between the reflectivity of the substrate front surface which is measured beforehand and a difference in a maximum temperature of the substrate and the substrate support part.

9. The rapid thermal processing apparatus according to claim 1 wherein the reflectivity of the front surface of the substrate is measured beforehand outside the processing chamber.

2. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a substrate lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate;

a support-part lamp part optically irradiating the substrate support part and heating the substrate support part;

a radiation light sensor arranged on a back surface side of the substrate and receiving a radiation light from the substrate;

a temperature computing part computing a temperature of the substrate based on an output signal of the radiation light sensor; and

a control part controlling an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part,

wherein the control part is provided to correct a control parameter of the irradiation intensity of the lamp part based on a reflectivity of the front surface of the substrate which is measured beforehand.

3. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a substrate lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate;

a support-part lamp part optically irradiating and heating the substrate support part;

a reflector plate arranged on a back surface side of the substrate and reflecting a radiation light from the substrate back surface;

a plurality of radiation light sensors arranged on the side of the back surface of the substrate and receiving a radiation light from the substrate back surface subjected to multiple reflection between the substrate back surface and the reflector plate;

an emissivity sensor receiving directly a radiation light from the substrate back surface;

an emissivity computing part computing an emissivity of the back surface of the substrate based on an output signal of one of the plurality of radiation light sensors and an output signal of the emissivity sensor;

a temperature computing part computing a temperature of the substrate and the substrate support part based on the output signals of the plurality of radiation light sensors and an output signal of the emissivity computing part; and

a control part controlling an irradiation intensity of each of the substrate lamp part and the support-part lamp part according to the temperature computed by the temperature computing part,

wherein the control part is provided to control the irradiation intensity of the substrate lamp part according to the temperature of the substrate computed by the temperature computing part, and control the irradiation intensity of the support-part lamp part according to a temperature of the substrate support part computed by the temperature computing part, and

wherein the control part is provided to correct both a control parameter of the irradiation intensity of the substrate lamp part and a control parameter of the irradiation intensity of the support-part lamp part, respectively, based on a reflectivity of the front surface of the substrate which is measured beforehand.

8. The rapid thermal processing apparatus according to claim 3 wherein the control part corrects a balance of the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part based on a correlation between the reflectivity of the front surface of the substrate which is measured beforehand and a balance of the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part when a difference in the temperature between the substrate and the substrate support part is minimum.

4. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a substrate lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate;

a support-part lamp part optically irradiating and heating the substrate support part;

a reflector plate arranged on a back surface side of the substrate and reflecting a radiation light from the substrate back surface;

a plurality of radiation light sensors arranged on the side of the back surface of the substrate and receiving a radiation light from the substrate back surface subjected to multiple reflection between the substrate back surface and the reflector plate;

an emissivity sensor receiving directly a radiation light from the substrate back surface;

an emissivity computing part computing an emissivity of the back surface of the substrate based on output signals of the plurality of radiation light sensors and an output signal of the emissivity sensor;

a support-part radiation light sensor receiving directly a radiation light from the substrate support part;

a temperature computing part computing a temperature of the substrate based on the output signals of the plurality of radiation light sensors and an output signal of the emissivity computing part, and computing a temperature of the substrate support part based on an output signal of the support-part radiation light sensor; and

a control part controlling an irradiation intensity of each of the substrate lamp part and the support-part lamp part according to a temperature computed by the temperature computing part,

wherein the control part is provided to control the irradiation intensity of the substrate lamp part according to the temperature of the substrate computed by the temperature computing part, and control the irradiation intensity of the support-part lamp part according to the temperature of the substrate support part computed by the temperature computing part, and

wherein the control part is provided to correct both a control parameter of the irradiation intensity of the substrate lamp part and a control parameter of the irradiation intensity of the support-part lamp part, respectively, based on a reflectivity of the front surface of the substrate which is measured beforehand.

10. A method of manufacture of a semiconductor device for performing a rapid thermal processing of a semiconductor substrate using a rapid thermal processing apparatus which comprises a processing chamber subjecting a semiconductor substrate to rapid thermal processing, a substrate support part arranged in the processing chamber and supporting the substrate, a lamp part optically irradiating the substrate supported by the substrate support part and heating the substrate, a thermo sensor provided to measure a temperature of the substrate, a temperature computing part computing the temperature of the substrate based on an output signal of the thermo sensor, and a control part controlling an irradiation intensity of the lamp part according to the temperature computed by the temperature computing part, the method of manufacture of the semiconductor device comprising the steps of:

performing the rapid thermal processing of the substrate; and

correcting a control parameter of the irradiation intensity of the lamp part based on a reflectivity of a surface of the substrate which is measured beforehand.

12. A semiconductor device provided with a transistor containing an impurity-diffusion layer which is formed by performing a rapid thermal processing of a semiconductor substrate after ion implantation of an impurity to a component active region of the substrate is performed,

wherein the rapid thermal processing of the semiconductor substrate is performed using the method of manufacture of the semiconductor device according to claim 10 to form the impurity-diffusion layer of the transistor.

11. A method of manufacture of a semiconductor device for performing a rapid thermal processing of a semiconductor substrate using a rapid thermal processing apparatus which comprises a processing chamber subjecting a semiconductor substrate to rapid thermal processing, a substrate support part arranged in the processing chamber and supporting the substrate, a substrate lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate, a support-part lamp part optically irradiating and heating the substrate support part, a reflector plate arranged on a back surface side of the substrate and reflecting a radiation light from the substrate back surface, a plurality of radiation light sensors arranged on the side of the back surface of the substrate and receiving a radiation light from the substrate back surface subjected to multiple reflection between the substrate back surface and the reflector plate, an emissivity sensor receiving directly a radiation light from the substrate back surface, an emissivity computing part computing an emissivity of the back surface of the substrate based on output signals of the plurality of radiation light sensors and an output signal of the emissivity sensor, a support-part radiation light sensor receiving directly a radiation light from the substrate support part, a temperature computing part computing a temperature of the substrate based on the output signals of the plurality of radiation light sensors and an output signal of the emissivity computing part, and computing a temperature of the substrate support part based on an output signal of the support-part radiation light sensor, and a control part controlling an irradiation intensity of each of the substrate lamp part and the support-part lamp part according to a temperature computed by the temperature computing part, the method of manufacture of the semiconductor device comprising the steps of:

performing the rapid thermal processing of the substrate so that the control part controls the irradiation intensity of the substrate lamp part according to a temperature of the substrate computed by the temperature computing part and controls the irradiation intensity of the support-part lamp part according to a temperature of the substrate support part computed by the temperature computing part; and

correcting both a control parameter of the irradiation intensity of the substrate lamp part and a control parameter of the support-part lamp part, respectively, based on a reflectivity of the front surface of the substrate which is measured beforehand.

13. The method of manufacture of the semiconductor device according to claim 11 wherein the reflectivity of the front surface of the substrate is measured beforehand within the processing chamber in a state before the substrate is heated in the processing chamber to reach a desired target temperature, and the control parameter of the irradiation intensity is corrected based on the measured reflectivity.

14. The method of manufacture of the semiconductor device according to claim 11 wherein the reflectivity of the front surface of the substrate is measured beforehand as being a value of the irradiation intensity of the lamp part needed to retain the substrate at a first temperature lower than a desired target temperature for a fixed time in a state where the substrate is heated in the processing chamber for the fixed time at the 1st temperature, and the control parameter of the irradiation intensity is corrected based on the value of the irradiation intensity.

15. The method of manufacture of the semiconductor device according to claim 11 wherein the control parameter of the irradiation intensity is corrected based on a correlation between the reflectivity of the substrate front surface which is measured beforehand and a difference in a maximum temperature of the substrate and the substrate support part.

16. The method of manufacture of the semiconductor device according to claim 11 wherein a balance of the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part is corrected based on a correlation between the reflectivity of the front surface of the substrate which is measured beforehand and a balance of the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part when a difference in the temperature between the substrate and the substrate support part is minimum.

17. The method of manufacture of the semiconductor device according to claim 11 wherein the reflectivity of the front surface of the substrate is measured beforehand outside the processing chamber.

18. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate;

a thermo sensor arranged on a back surface side of the substrate and receiving a radiation light from the substrate;

a temperature computing part computing a temperature of the substrate based on an output signal of the thermo sensor; and

a control part controlling an irradiation intensity of the lamp part according to the temperature of the substrate computed by the temperature computing part,

wherein the control part is provided to turn on the lamp part intermittently and to control the irradiation intensity of the lamp part according to a temperature of the substrate computed by the temperature computing part based on a radiation light which is received by the thermo sensor when the lamp part is turned off.

19. The rapid thermal processing apparatus according to claim 18 wherein the control part discards, when controlling the irradiation intensity of the lamp part, the temperature of the substrate computed based on a radiation light which is received by the thermo sensor when the lamp part is turned on.

20. The rapid thermal processing apparatus according to claim 18 wherein the control part terminates an intermittent irradiation of the lamp part if a difference between the substrate temperature computed based on the radiation light received by the thermo sensor when the lamp part is turned on and the substrate temperature computed based on the radiation light received by the thermo sensor when the lamp part is turned off is less than a predetermined threshold, and starts a continuous irradiation of the lamp part in which the control part controls the irradiation intensity of the lamp part according to the substrate temperature computed based on the radiation light received by the thermo sensor when the lamp part is turned on.

25. The rapid thermal processing apparatus according to claim 18 wherein the lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the thermo sensor comprises a plurality of thermo sensors arranged corresponding to the plurality of heating lamps respectively.

26. The rapid thermal processing apparatus according to claim 25 wherein the control part controls an irradiation intensity of each of the plurality of heating lamps respectively.

21. A method of rapid thermal processing of a semiconductor substrate using a rapid thermal processing apparatus which comprises a processing chamber subjecting the substrate to rapid thermal processing, a substrate support part arranged in the processing chamber and supporting the substrate, a lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate, a thermo sensor arranged on a back surface side of the substrate and receiving a radiation light from the substrate, a temperature computing part computing a temperature of the substrate based on an output signal of the thermo sensor, and a control part controlling an irradiation intensity of the lamp part according to the temperature of the substrate computed by the temperature computing part, the method comprising the steps of:

performing an intermittent irradiation of the lamp part by turning on the lamp part intermittently;

acquiring a first substrate temperature computed based on an output signal of the thermo sensor when the lamp part is turned on;

acquiring a second substrate temperature computed based on an output signal of the thermo sensor when the lamp part is turned off; and

controlling the irradiation intensity of the lamp part according to the second substrate temperature when a difference between the first substrate temperature and the second substrate temperature is larger than a predetermined threshold.

22. The method according to claim 21 wherein the intermittent irradiation step, the first substrate temperature acquiring step, and the second substrate temperature acquiring step are repeated until the difference between the first substrate temperature and the second substrate temperature is less than the predetermined threshold.

23. The method according to claim 21 further comprising the steps of:

terminating the intermittent irradiation of the lamp part if the difference between the first substrate temperature and the second substrate temperature is less than the predetermined threshold; and

starting a continuous irradiation of the lamp part in which the control part controls the irradiation intensity of the lamp part according to the first substrate temperature computed based on the radiation light received by the thermo sensor when the lamp part is turned on.

27. The rapid thermal processing method according to claim 21 wherein the lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the thermo sensor comprises a plurality of thermo sensors arranged corresponding to the plurality of heating lamps respectively.

28. The rapid thermal processing method according to claim 27 wherein in the controlling step is performed so that an irradiation intensity of each of the plurality of heating lamps is controlled respectively.

24. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supports the substrate;

a lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate;

a thermo sensor arranged on a back surface side of the substrate and receiving a radiation light from the substrate;

a temperature computing part computing a temperature of the substrate based on an output result of the thermo sensor; and

a control part controlling an irradiation intensity of the lamp part according to the temperature of the substrate computed by the temperature computing part,

wherein the control part is provided to make an output power of the lamp part decrease intermittently and to control the irradiation intensity of the lamp part according to a temperature of the substrate computed by the temperature computing part based on a radiation light which is received by the thermo sensor when the output power of the lamp part is decreased.

29. The rapid thermal processing apparatus according to claim 24 wherein the lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the thermo sensor comprises a plurality of thermo sensors arranged corresponding to the plurality of heating lamps respectively.

30. The rapid thermal processing apparatus according to claim 29 wherein the control part controls a irradiation intensity of each of the plurality of heating lamps respectively.

31. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a first lamp part optically irradiating and heating a front surface of the substrate supported by the substrate support part;

a first radiation light sensor arranged on a back surface side of the substrate and receiving a radiation light from the substrate;

a temperature computing part computing a temperature of the substrate based on an output signal of the first radiation light sensor; and

a control part controlling an irradiation intensity of the first lamp part according to the temperature of the substrate computed by the temperature computing part,

wherein the rapid thermal processing apparatus further comprises a second lamp part optically irradiating and heating the substrate support part, and a second radiation light sensor arranged on a back surface side of the substrate support part and receiving a radiation light from the substrate support part, and

wherein the temperature computing part computes a temperature of the substrate support part based on an output signal of the second radiation light sensor, and the control part controls the irradiation intensity of the first lamp part based on the calculated temperature of the substrate, and controls an irradiation intensity of the second lamp part based on the calculated temperature of the substrate support part.

33. The rapid thermal processing apparatus according to claim 31 wherein the first lamp part optically irradiates both the substrate and the substrate support part, and the second lamp part optically irradiates only the substrate support part.

35. The rapid thermal processing apparatus according to claim 33 wherein the control part controls the irradiation intensity of the second lamp part based on both the output signal of the first radiation light sensor and the output signal of the second radiation light sensor.

37. The rapid thermal processing apparatus according to claim 33 wherein the control part controls the irradiation intensity of the first lamp part based on both the output signal of the first radiation light sensor and the output signal of the second radiation light sensor.

39. The rapid thermal processing apparatus according to claim 33 wherein the control part controls the irradiation intensity of the first lamp part and the irradiation intensity of the second lamp part based on both the output signal of the first radiation light sensor and the output signal of the second radiation light sensor.

41. The rapid thermal processing apparatus according to claim 35 wherein the first lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the second lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate support part.

43. The rapid thermal processing apparatus according to claim 31 wherein the control part controls the irradiation intensity of the first lamp part in response to a difference between the calculated temperature of the substrate and a predetermined setting temperature, and controls the irradiation intensity of the second lamp part in response to a difference between the calculated temperature of the substrate support part and the predetermined setting temperature.

32. A rapid thermal processing apparatus comprising:

a processing chamber subjecting a semiconductor substrate to rapid thermal processing;

a substrate support part arranged in the processing chamber and supporting the substrate;

a substrate lamp part optically irradiating a front surface of the substrate supported by the substrate support part and heating the substrate;

a support-part lamp part optically irradiating and heating the substrate support part;

a reflector plate arranged on a back surface side of the substrate and reflecting a radiation light from the substrate back surface;

a substrate radiation light sensor arranged on the back surface side of the substrate and receiving a radiation light from the substrate back surface subjected to multiple reflection between the substrate back surface and the reflector plate;

a support-part radiation light sensor receiving a radiation light from the substrate support part directly;

a temperature computing part computing a temperature of the substrate based on an output result of the substrate radiation light sensor, and computing a temperature of the substrate support part based on an output signal of the support-part radiation light sensor;

a control part controlling an irradiation intensity of each of the substrate lamp part and the support-part lamp part according to a temperature computed by the temperature computing part; and

an optically closed space being formed on the back surface side of the substrate in a state where the substrate is supported by the substrate support part,

wherein the control part is provided to control the irradiation intensity of the substrate lamp part based on a temperature of the substrate computed by the temperature computing part, and to control the irradiation intensity of the support-part lamp part based on a temperature of the substrate support part computed by the temperature computing part.

34. The rapid thermal processing apparatus according to claim 32 wherein the substrate lamp part optically irradiates both the substrate and the substrate support part, and the support-part lamp part optically irradiates only the substrate support part.

36. The rapid thermal processing apparatus according to claim 34 wherein the control part controls the irradiation intensity of the support-part lamp part based on both the output signal of the substrate radiation light sensor and the output signal of the support-part radiation light sensor.

38. The rapid thermal processing apparatus according to claim 34 wherein the control part controls the irradiation intensity of the substrate lamp part based on both the output signal of the substrate radiation light sensor and the output signal of the support-part radiation light sensor.

40. The rapid thermal processing apparatus according to claim 34 wherein the control part controls the irradiation intensity of the substrate lamp part and the irradiation intensity of the support-part lamp part based on both the output signal of the substrate radiation light sensor and the output signal of the support-part radiation light sensor.

42. The rapid thermal processing apparatus according to claim 36 wherein the substrate lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate, and the support-part lamp part comprises a plurality of heating lamps each optically irradiating and heating the substrate support part.

44. The rapid thermal processing apparatus according to claim 32 wherein the control part controls the irradiation intensity of the substrate lamp part in response to a difference between the calculated temperature of the substrate and a predetermined setting temperature, and controls the irradiation intensity of the support-part lamp part in response to a difference between the calculated temperature of the substrate support part and the predetermined setting temperature.