Focused ion beam deposition

• US 20060051508A1
• Filed: 10/26/2005
• Published: 03/09/2006
• Est. Priority Date: 12/28/2000
• Status: Abandoned Application

• Current Assignee: Ilan Gavish, Yuval Greenzweig
• Original Assignee: Ilan Gavish, Yuval Greenzweig
• Inventors: Greenzweig, Yuval, Gavish, Ilan
• Application Number:
  US11/260,790
• Publication Number:
  US 20060051508A1
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/486 using ion beam radiation
• CPC Class Codes: C23C 16/56 After-treatment

Abstract

Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal into a chamber containing a substrate. Contacting the substrate with a focused ion beam introduced into the chamber. Forming at least one layer over the substrate. Applying heat to the layer by, for example, a laser.

Claims

1. A method comprising:

introducing at least one metal precursor into a chamber containing a substrate;

contacting the substrate with a focused ion beam introduced into the chamber;

forming a metal layer on the substrate; and

applying heat to the metal layer.

2. The method of claim 1, wherein the metal precursor contains one of cobalt, molybdenum, platinum, tungsten, and a metal carbonyl.

3. The method of claim 1, further comprising:

removing one of carbon, oxygen, and gallium from the metal layer.

4. The method of claim 1, wherein the metal layer comprises a first metal layer, the method further comprising:

forming a second metal layer on the first metal layer.

5. The method of claim 1, wherein applying heat is performed by one of a laser, local ion scan bombardment, and current forced through the at least one layer.

10. The method of claim 1, wherein applying heat comprises applying a coherent electromagnetic radiation source to the metal layer.

11. The method of claim 10, wherein applying a coherent electromagnetic radiation source comprises outputting coherent electromagnetic radiation at a power in a range of between 0.3 watts and 5 watts for a time period in a range of between 500 milliseconds and 20 seconds.

12. The method of claim 10, further comprising focusing the coherent electromagnetic radiation source with a lens to a spot size on the metal layer, wherein the spot size has an area in a range of between 0.5 micro-meters-squared and 800 micro-meters-squared.

13. The method of claim 10, wherein forming the metal layer on the substrate comprises forming a metal layer line having a thickness on the order of 0.25 microns and a width on the order of 8 microns.

14. The method of claim 10, wherein applying a coherent electromagnetic radiation source comprises a stage speed in a range of between 1 micron per second and 250 microns per second.

15. The method of claim 10, further comprising positioning at least one inlet to introduce the at least one metal precursor gas on the order of 100 microns from a surface of the substrate on the order of 100 microns from a center of the focused ion beam.

6. A method comprising:

introducing a precursor comprising one of cobalt, molybdenum, platinum, and tungsten into a chamber containing a substrate;

contacting the substrate with a focused ion beam;

forming a metal layer on the substrate;

heating the metal layer; and

removing one of carbon, oxygen, and gallium from the metal layer.

7. The method of claim 6, further comprising:

introducing a precursor comprising at least two metals into the focused ion beam; and

introducing the focused ion beam into the processing chamber.

8. The method of claim 6, wherein the metal layer comprises a first metal layer, the method further comprising:

forming a second metal layer on the first metal layer.

9. The method of claim 8, wherein one of the first metal layer and the second metal layer is an alloy layer.

16. A method comprising:

introducing at least one metal precursor into a chamber containing a substrate;

contacting the substrate with a focused ion beam into the chamber;

forming a metal layer on the substrate; and

lowering a resistance of the metal layer.

17. The method of claim 16, wherein the metal precursor contains one of cobalt, molybdenum, platinum, tungsten, and a metal carbonyl.

18. The method of claim 16, further comprising:

removing one of carbon, oxygen, and gallium from the at least one layer.

19. The method of claim 16, wherein lowering a resistance of the metal layer comprises heating the metal layer with one of a laser, local ion scan bombardment, and current forced through the at least one layer.