Methods for simulating reticle layout data, inspecting reticle layout data, and generating a process for inspecting reticle layout data

• US 20060051682A1
• Filed: 12/03/2004
• Published: 03/09/2006
• Est. Priority Date: 12/04/2003
• Status: Active Grant

• Current Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Original Assignee: Kla-Tencor Technologies Corporation (KLA Corporation)
• Inventors: Xiong, Yalin, Hess, Carl
• Granted Patent: US 8,151,220 B2
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

Various computer-implemented methods are provided. One method for generating a process for inspecting reticle layout data includes identifying a first region in the reticle layout data. A printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data. The method also includes assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region. Another method includes inspecting the first region with a higher sensitivity than the second region. An additional method includes simulating how the reticle layout data will print. Simulation of the first and second regions is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

Claims

1. A computer-implemented method for generating a process for inspecting reticle layout data, comprising:

identifying a first region in the reticle layout data, wherein a printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data; and

assigning one or more inspection parameters to the first region and the second region such that the first region will be inspected during the process with a higher sensitivity than the second region.

2. The method of claim 1, wherein the printability of the first and second regions is the printability of the first and second regions on a reticle, and wherein the process parameters comprise reticle manufacturing process parameters.

3. The method of claim 1, wherein the printability of the first and second regions is the printability of the first and second regions on a wafer, and wherein the process parameters comprise reticle manufacturing process parameters and wafer manufacturing process parameters.

4. The method of claim 1, wherein the first region has an area approximately equal to an area of one feature in the reticle layout data.

5. The method of claim 1, wherein the printability of the first region is more sensitive to the changes in the process parameters in that the first region has a narrower process window than the second region.

6. The method of claim 1, wherein the printability of the first region is more sensitive to the changes in the process parameters in that the first region has a higher mask error enhancement factor than the second region.

7. The method of claim 1, further comprising generating a review process for the reticle layout data, wherein generating the review process comprises assigning one or more review parameters to the first region and the second region such that the first region will be reviewed during the review process with a higher sensitivity than the second region.

8. A computer-implemented method for inspecting reticle layout data, comprising:

identifying a first region in the reticle layout data, wherein a printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data; and

inspecting the first region with a higher sensitivity than the second region.

9. The method of claim 8, wherein the printability of the first and second regions is the printability of the first and second regions on a reticle, and wherein the process parameters comprise reticle manufacturing process parameters.

10. The method of claim 8, wherein the printability of the first and second regions is the printability of the first and second regions on a wafer, and wherein the process parameters comprise reticle manufacturing process parameters and wafer manufacturing process parameters.

11. The method of claim 8, wherein the first region has an area approximately equal to an area of one feature in the reticle layout data.

12. The method of claim 8, wherein the printability of the first region is more sensitive to the changes in the process parameters in that the first region has a narrower process window than the second region.

13. The method of claim 8, wherein the printability of the first region is more sensitive to the changes in the process parameters in that the first region has a higher mask error enhancement factor than the second region.

14. The method of claim 8, wherein said inspecting comprises detecting printing defects that will be produced by the first and second regions of the reticle layout data.

15. The method of claim 8, wherein said inspecting is performed prior to manufacturing of a reticle with the reticle layout data, the method further comprising altering the reticle layout data based on results of said inspecting.

16. The method of claim 8, further comprising determining how sensitive a printability of each region of the reticle layout data is to the changes in the process parameters, wherein said inspecting comprises inspecting said each region of the reticle layout data with a sensitivity based on the sensitivity of the printability of said each region.

17. A computer-implemented method for simulating reticle layout data, comprising:

identifying a first region in the reticle layout data, wherein a printability of the first region is more sensitive to changes in process parameters than a printability of a second region in the reticle layout data; and

simulating how the reticle layout data will print, wherein simulation of the first region and the second region is performed with one or more different simulation parameters such that the first region is simulated with a higher fidelity than the second region.

18. The method of claim 17, wherein the printability of the first and second regions is the printability of the first and second regions on a reticle, and wherein the process parameters comprise reticle manufacturing process parameters.

19. The method of claim 17, wherein the printability of the first and second regions is the printability of the first and second regions on a wafer, and wherein the process parameters comprise reticle manufacturing process parameters and wafer manufacturing process parameters.

20. The method of claim 17, wherein said simulating comprises simulating how the reticle layout data will print with different process parameters, and wherein the one or more different simulation parameters comprise higher sampling of the different process parameters for the first region than for the second region.

21. The method of claim 17, wherein the one or more different simulation parameters comprise a larger number of pixels for the first region than for the second region.

22. The method of claim 17, further comprising detecting printing defects that will be produced by the reticle layout data based on said simulating.

23. The method of claim 17, further comprising altering the reticle layout data based on said simulating.

24. The method of claim 17, wherein said simulating comprises simulating an entirety of the reticle layout data.