Atomic layer deposition of metal oxynitride layers as gate dielectrics

• US 20060051925A1
• Filed: 10/19/2005
• Published: 03/09/2006
• Est. Priority Date: 01/27/2003
• Status: Abandoned Application

• Current Assignee: Kie Y. Ahn, Leonard Forbes
• Original Assignee: Kie Y. Ahn, Leonard Forbes
• Inventors: Ahn, Kie Y., Forbes, Leonard
• Application Number:
  US11/253,542
• Publication Number:
  US 20060051925A1
• Time in Patent Office: Days
• US Class Current: 438/287
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02181 the material containing hafnium, e.g. HfO2
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/3143 composed of alternated layers or of mixtures of nitrides and oxides or of oxinitrides, e.g. formation of oxinitride by oxidation of nitride layers
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A metal oxynitride layer formed by atomic layer deposition of a plurality of reacted monolayers, the monolayers comprising at least one each of a metal, an oxide and a nitride. The metal oxynitride layer is formed from zirconium oxynitride, hafnium oxynitride, tantalum oxynitride, or mixtures thereof. The metal oxynitride layer is used in gate dielectrics as a replacement material for silicon dioxide. A semiconductor device structure having a gate dielectric formed from a metal oxynitride layer is also disclosed.

Claims

1. A method of forming a metal oxynitride layer, comprising:

providing a semiconductor substrate; and

forming a layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition, wherein the layer has a uniform composition, wherein the layer consists of a metal, oxygen, and nitrogen, and wherein the layer is a metal oxynitride selected from the group consisting of zirconium oxynitride, hafnium oxynitride, and mixtures thereof.

2. The method of claim 1, wherein forming a layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate, the plurality of gaseous precursors consisting of a metal gaseous precursor, an oxygen-containing precursor, and a nitrogen-containing precursor.

3. The method of claim 2, wherein separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate comprises separately introducing the metal gaseous precursor selected from the group consisting of zirconium tetrachloride, zirconium tetraiodide, hafnium tetrachloride, and hafnium tetraiodide to the surface of the semiconductor substrate.

4. The method of claim 2, wherein separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate comprises separately introducing the oxygen-containing gaseous precursor selected from the group consisting of at least one of water and hydrogen peroxide to the surface of the semiconductor substrate and separately introducing the nitrogen-containing gaseous precursor selected from the group consisting of at least one of ammonia, tert-butylamine, allylamine, and 1,1-dimethylhydrazine to the surface of the semiconductor substrate.

5. The method of claim 1, wherein forming a layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises forming monolayers of metal, oxide, and nitride and reacting the metal monolayers, the oxide monolayers, and the nitride monolayers to form the layer that consists of the metal oxynitride.

6. The method of claim 1, wherein forming a layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises forming the layer that consists of the metal oxynitride at a thickness that ranges from approximately 15 Å

to approximately 200 Å

.

7. The method of claim 1, wherein forming a layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises forming at least one monolayer of a metal selected from the group consisting of zirconium, hafnium, and mixtures thereof and reacting the at least one monolayer of the metal with oxide monolayers and nitride monolayers.

8. A method of forming a semiconductor device structure, comprising:

providing a semiconductor substrate;

forming a gate dielectric layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition, wherein the gate dielectric layer has a uniform composition, wherein the gate dielectric layer consists of a metal, oxygen, and nitrogen, and wherein the gate dielectric layer is a metal oxynitride selected from the group consisting of zirconium oxynitride, hafnium oxynitride layer, and mixtures thereof; and

forming a gate over the gate dielectric layer.

9. The method of claim 8, wherein forming a gate dielectric layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate, the plurality of gaseous precursors consisting of a metal gaseous precursor, an oxygen-containing precursor, and a nitrogen-containing precursor.

10. The method of claim 9, wherein separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate comprises separately introducing the metal gaseous precursor selected from the group consisting of zirconium tetrachloride, zirconium tetraiodide, hafnium tetrachloride, and hafnium tetraiodide to the surface of the semiconductor substrate.

11. The method of claim 9, wherein separately introducing a plurality of gaseous precursors to the surface of the semiconductor substrate comprises separately introducing at least one of water and hydrogen peroxide as the oxygen-containing gaseous precursor to the surface of the semiconductor substrate and separately introducing at least one of ammonia, tert-butylamine, allylamine, and 1,1-dimethylhydrazine as the nitrogen-containing gaseous precursor to the surface of the semiconductor substrate.

12. The method of claim 8, wherein forming a gate dielectric layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises forming monolayers that consist of metal monolayers, oxide monolayers, and nitride monolayers and reacting the metal monolayers, oxide monolayers, and nitride monolayers to form the gate dielectric layer.

13. The method of claim 8, wherein forming a gate dielectric layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition comprises forming the gate dielectric layer at a thickness that ranges from approximately 15 Å

to approximately 200 Å

.

14. A method of forming a metal oxynitride layer, comprising:

providing a semiconductor substrate; and

reacting a plurality of monolayers to form a metal oxynitride layer that consists of a metal, oxygen, and nitrogen, wherein the metal oxynitride layer comprises a uniform composition and wherein the metal oxynitride layer is a metal oxynitride selected from the group consisting of zirconium oxynitride, hafnium oxynitride layer, and mixtures thereof.

15. The method of claim 14, wherein reacting a plurality of monolayers to form a metal oxynitride layer that consists of a metal, oxygen, and nitrogen comprises forming the metal oxynitride layer at a thickness that ranges from approximately 15 Å

to approximately 200 Å

.

16. The method of claim 14, wherein reacting a plurality of monolayers to form a metal oxynitride layer that consists of a metal, oxygen, and nitrogen comprises reacting at least one monolayer of a metal selected from the group consisting of zirconium, hafnium, and mixtures thereof with at least one oxide monolayer and at least one nitride monolayer.