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Atomic layer deposition of metal oxynitride layers as gate dielectrics

  • US 20060051925A1
  • Filed: 10/19/2005
  • Published: 03/09/2006
  • Est. Priority Date: 01/27/2003
  • Status: Abandoned Application
First Claim
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1. A method of forming a metal oxynitride layer, comprising:

  • providing a semiconductor substrate; and

    forming a layer that consists of a metal oxynitride in contact with a surface of the semiconductor substrate by atomic layer deposition, wherein the layer has a uniform composition, wherein the layer consists of a metal, oxygen, and nitrogen, and wherein the layer is a metal oxynitride selected from the group consisting of zirconium oxynitride, hafnium oxynitride, and mixtures thereof.

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