Biofabrication of transistors including field effect transistors

• US 20060052947A1
• Filed: 05/17/2005
• Published: 03/09/2006
• Est. Priority Date: 05/17/2004
• Status: Abandoned Application

• Current Assignee: Siluria Technologies, Inc. (Lummus Technology LLC)
• Original Assignee: Siluria Technologies, Inc. (Lummus Technology LLC)
• Inventors: Hu, Evelyn
• Application Number:
  US11/130,399
• Publication Number:
  US 20060052947A1
• Time in Patent Office: Days
• US Class Current: 702/20
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G01N 33/54373 involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
• CPC Class Codes: G11C 13/0014 comprising cells based on organic memory material
• CPC Class Codes: G11C 13/0019 comprising bio-molecules
• CPC Class Codes: H01L 21/28079 the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
• CPC Class Codes: H01L 21/28167 on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/66568 Lateral single gate silicon transistors
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Use of peptides and other biological agents for fabrication of transistors, field effect transistors, and components thereof. An intermediate component for use in fabrication of a field effect transistor, the component comprising at least two of the following transistor elements: (i) source, (ii) drain, (iii) channel, (iv) gate, and (v) dielectric, wherein the at least two elements are combined by a biological agent comprising at least two binding structures, wherein each of the binding structures is bound to one of the at least two elements. The channel can be a nanowire or a nanotube which is surrounded by a high-K dielectric material, which is further surrounded by a metal gate layer. The biological agent can be a bifunctional peptide which binds dielectric to channel or binds dielectric to gate materials.

Claims

1-105. -105. (canceled)

106. An component for use in fabrication of a transistor, the component comprising at least two of the following transistor elements:

(i) source, (ii) drain, (iii) channel, (iv) gate, and (v) dielectric, wherein the at least two elements are combined by a biological agent comprising at least two binding structures, wherein each of the binding structures is bound to one of the at least two elements.

107. The component according to claim 106, wherein the transistor is a field effect transistor.

108. The component according to claim 107, wherein the field effect transistor is a MISFET, a MOSFET, a MESFET, or a JFET.

109. The component according to claim 106, wherein the biological agent is a synthetic or engineered peptide.

110. The component of claim 106, wherein the channel comprises a nanowire or nanotube.

111. The component of claim 110, wherein the nanowire comprises a compositionally modulated material.

112. The component of claim 106, wherein the channel comprises an electrically conductive polymer.

113. The component of claim 106, wherein the gate is part of a wrap around gate structure.

114. The component of claim 106, wherein the gate is a metallic gate.

115. The component of claim 106, wherein the gate is a semiconductor gate.

116. The component of claim 106, wherein the dielectric is a high K dielectric.

117. The component of claim 106, wherein the dielectric is an oxide.

118. The component according to claim 106, wherein the source, channel, and drain are present as an integrated structure, and the biological agent comprising at least two binding structures further binds the source and drain to additional source and drain structures.

119. An electronic device comprising a plurality of field effect transistors, wherein the field effect transistors comprise channels comprising nanowires which are substantially monodisperse in length.

120. A nanowire structure comprising a nanowire core and a first nanowire outer layer surrounding the core, wherein a biological agent comprising at least two binding structures is used to combine the nanowire core and the nanowire outer layer.

121. The nanowire structure according to claim 120, further comprising a second nanowire outer layer which surrounds the first outer layer.

122. The nanowire structure of claim 120, wherein the core nanowire is a heterostructure and comprises end materials.

123. An intermediate component for use in fabrication of a transistor, the component comprising at least two of the following transistor elements:

(i) source, (ii) drain, (iii) channel, (iv) gate, and (v) dielectric, wherein the at least two elements are combined by a biological agent comprising at least two binding structures, wherein each of the binding structures is bound to one of the at least two elements.

124. The intermediate component according to claim 123, wherein the transistor is a field effect transistor comprising a wrap around gate.

125. A process for fabricating elements of a field effect transistor, comprising the step of combining at least a channel element and a source or drain element, wherein at least one biological agent comprising at least two binding structures is used to combine the channel element and the source or drain element.

126. A method for engineering the surface of a nanowire with an outer layer material comprising the step of binding the surface of the nanowire with a biological agent comprising at least two binding structures, one binding structure for the surface of the nanowire, and one binding structure for the outer layer material.

127. The method of claim 126, wherein the nanowire is formed using biological agents.

128. The method of claim 126, wherein a material is deposited on the surface of the outer layer material.

129. A biological agent represented by A-B-C, wherein A and C are selective binding structures and B is an optional linking structure, wherein A and C selectively bind to a channel, a dielectric, a gate, a source, or a drain material.

130. A field effect transistor comprising a nanowire or nanotube channel, a dielectric material surrounding the channel, and a metal or semiconductor layer surrounding the dielectric material.

131. The transistor according to claim 130, wherein the dielectric material or metal layer surrounding the dielectric material are deposited using biological agents.

132. The field effect transistor according to claim 130, wherein the nanowire or nanotube forms an integrated structure with source and drain structures.

133. A method of forming a field effect transistor comprising

providing a nanowire or nanotube channel,

depositing a dielectric material to surround the channel, and

depositing a metal layer or semiconductor layer to surround the dielectric material, wherein at least one of the deposition steps is performed using a biological agent.

134. A transistor comprising a nanowire or nanotube channel, a dielectric material surround the channel and having a K value of about 10 or more, and a gate layer surrounding the dielectric material.

135. A method of forming a dielectric layer surrounding a nanowire or a nanotube comprising the steps of providing the nanowire or nanotube, providing the dielectric material or a precursor thereof, providing a biological agent which comprises at least two binding structures, and forming the dielectric layer on the nanowire or nanotube in the presence of the biological agent.

136. A method of forming a gate layer surrounding a dielectric material comprising the steps of providing the dielectric material, providing the gate material or a precursor thereof, providing a biological agent which comprises at least two binding structures, and forming the gate layer on the dielectric material in the presence of the biological agent.

137. A method of forming a connection between a nanowire or a nanotube and a source or a drain, comprising the steps of providing a biological agent which comprises at least two binding structures, providing the nanowire or the nanotube, providing the source or drain, and connecting the nanowire or nanotube with the source or drain in the presence of the biological agent.

138. A method of forming a metal layer surrounding a nanowire or a nanotube comprising the steps of providing the nanowire or nanotube, providing the metal material or a precursor thereof, providing a biological agent which comprises at least two binding structures, and forming the metal layer on the nanowire or nanotube in the presence of the biological agent.

139. A method of forming a semiconductor layer surrounding a nanowire or a nanotube comprising the steps of providing the nanowire or nanotube, providing the semiconductor material or a precursor thereof, providing a biological agent which comprises at least two binding structures, and forming the semiconductor layer on the nanowire or nanotube in the presence of the biological agent.