Semiconductor device and method for manufacturing semiconductor device
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Abstract
A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrates. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.
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Citations
28 Claims
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1-9. -9. (canceled)
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10. A semiconductor device comprising:
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a single crystal substrate primarily including zinc oxide and having a zinc-polar surface and an oxygen-polar surface; and
at least one layer of thin film primarily including zinc oxide disposed on the zinc-polar surface. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a semiconductor device, comprising the steps of:
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determining whether a surface of a single crystal substrate primarily including zinc oxide is a zinc-polar surface or an oxygen-polar surface; and
forming at least one layer of thin film primarily including zinc oxide on the zinc-polar surface. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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Specification