Light-emitting device of gallium nitride-based III-V group compound semiconductor
First Claim
1. A light-emitting device of gallium nitride-based III-V group compound semiconductor comprising:
- a substrate;
a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface, arranged over said substrate;
a light-emitting layer disposed over said n-type gallium nitride-based III-V group compound semiconductor layer;
a p-type gallium nitride-based III-V group compound semiconductor layer arranged over said light-emitting layer;
a texturing surface layer covered over said p-type gallium nitride-based III-V group compound semiconductor layer;
a transparent conductive oxide layer arranged over said texturing surface layer and establishing an ohmic contact with said texturing surface layer;
a first electrode electrically coupling with said ohmic contact area with texturing surface of said n-type gallium nitride-based III-V group compound semiconductor layer;
a second electrode electrically coupling with said transparent conductive oxide layer.
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Abstract
A light-emitting device of gallium nitride-based III-V group compound semiconductor includes a substrate, a texturing surface area arranged over the substrate; a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface disposed over the substrate; a light-emitting layer arranged over the n-type gallium nitride-based III-V group compound semiconductor layer; a p-type gallium nitride-based III-V group compound semiconductor layer disposed over the light-emitting layer; a texturing surface layer covered over the p-type gallium nitride-based III-V group compound semiconductor layer; a transparent conductive oxide layer arranged over the texturing surface layer and establishing an ohmic contact with the texturing surface layer; a first electrode electrically coupling with the ohmic contact area with texturing surface of the n-type gallium nitride-based III-V group compound semiconductor layer; a second electrode electrically coupling with the transparent conductive oxide layer.
58 Citations
23 Claims
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1. A light-emitting device of gallium nitride-based III-V group compound semiconductor comprising:
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a substrate;
a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface, arranged over said substrate;
a light-emitting layer disposed over said n-type gallium nitride-based III-V group compound semiconductor layer;
a p-type gallium nitride-based III-V group compound semiconductor layer arranged over said light-emitting layer;
a texturing surface layer covered over said p-type gallium nitride-based III-V group compound semiconductor layer;
a transparent conductive oxide layer arranged over said texturing surface layer and establishing an ohmic contact with said texturing surface layer;
a first electrode electrically coupling with said ohmic contact area with texturing surface of said n-type gallium nitride-based III-V group compound semiconductor layer;
a second electrode electrically coupling with said transparent conductive oxide layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A light-emitting device of gallium nitride-based III-V group compound semiconductor comprising:
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a substrate;
a n-type gallium nitride-based III-V group compound semiconductor layer having an ohmic contact area with texturing surface, arranged over said substrate;
a light-emitting layer disposed over said n-type gallium nitride-based III-V group compound semiconductor layer;
a p-type gallium nitride-based III-V group compound semiconductor layer arranged over said light-emitting layer. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14)
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15. A light-emitting device of gallium nitride-based III-V group compound semiconductor comprising:
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a substrate with a texturing surface area thereover;
a n-type gallium nitride-based III-V group compound semiconductor layer arranged over said substrate;
a light-emitting layer disposed over said n-type gallium nitride-based III-V group compound semiconductor layer;
a p-type gallium nitride-based III-V group compound semiconductor layer arranged over said light-emitting layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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Specification