Light emitting diode improved in luminous efficiency
First Claim
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1. A Light Emitting Diode (LED) comprising:
- a sapphire substrate;
an n-doped semiconductor layer grown on the sapphire substrate;
an active layer grown on a major region of the n-doped semiconductor layer;
a p-doped semiconductor layer grown on the active layer;
a p-electrode formed on the p-doped semiconductor layer;
a high reflectivity material layer deposited on a remaining region of the n-doped semiconductor layer, the high reflectivity material layer containing Cu and Si; and
an n-electrode formed on the high reflectivity material layer.
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Abstract
The present invention relates to an LED, in which an n-doped semiconductor layer, an active layer, a p-doped semiconductor layer and a p-electrode are formed in their order on a sapphire substrate. A high reflectivity material layer containing Cu and Si is deposited on a remaining partial region of the n-doped semiconductor layer. An n-electrode is formed on the high reflectivity material layer. The high reflectivity material layer formed between the n-electrode and the partial region of the underlying n-doped semiconductor layer can reflect light toward a substrate, thereby improving the luminous efficiency of the LED.
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17 Claims
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1. A Light Emitting Diode (LED) comprising:
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a sapphire substrate;
an n-doped semiconductor layer grown on the sapphire substrate;
an active layer grown on a major region of the n-doped semiconductor layer;
a p-doped semiconductor layer grown on the active layer;
a p-electrode formed on the p-doped semiconductor layer;
a high reflectivity material layer deposited on a remaining region of the n-doped semiconductor layer, the high reflectivity material layer containing Cu and Si; and
an n-electrode formed on the high reflectivity material layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification