Method of forming a low capacitance semiconductor device and structure therefor
First Claim
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1. A method of forming a semiconductor device comprising:
- providing a substrate of a first conductivity type having a first surface;
forming a first source region and a second source region of the first conductivity type on at least a first portion of the first surface of the substrate wherein the second source region is spaced apart from the first source region;
forming a gate structure overlying the first surface of the substrate with a first end of the gate structure overlying an edge of the first source region and a second end of the gate structure overlying an edge of the second source region wherein a first surface of the gate structure is substantially parallel to the first surface of the substrate and faces away from the first surface of the substrate;
forming an opening in the gate structure and overlying a second portion of the substrate that is positioned in-between the first source region and the second source region;
forming an insulator at least on sidewalls of the opening; and
forming a conductor within the opening and on the insulator.
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Abstract
In one embodiment a transistor is formed with a gate structure having an opening in the gate structure. An insulator is formed on at least sidewalls of the opening and a conductor is formed on the insulator.
12 Citations
20 Claims
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1. A method of forming a semiconductor device comprising:
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providing a substrate of a first conductivity type having a first surface;
forming a first source region and a second source region of the first conductivity type on at least a first portion of the first surface of the substrate wherein the second source region is spaced apart from the first source region;
forming a gate structure overlying the first surface of the substrate with a first end of the gate structure overlying an edge of the first source region and a second end of the gate structure overlying an edge of the second source region wherein a first surface of the gate structure is substantially parallel to the first surface of the substrate and faces away from the first surface of the substrate;
forming an opening in the gate structure and overlying a second portion of the substrate that is positioned in-between the first source region and the second source region;
forming an insulator at least on sidewalls of the opening; and
forming a conductor within the opening and on the insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor device comprising:
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providing a semiconductor substrate of a first conductivity type having a surface;
forming a first body region of a second conductivity type on the surface of the semiconductor substrate;
forming a first region of the first conductivity type within the first body region and spaced apart from an edge of the first body region;
positioning a gate structure having a first portion overlying at least a portion of the first region, a second portion overlying a portion of the first body region, and a third portion overlying a first portion of the semiconductor substrate;
forming an insulator on a first sidewall of the gate structure; and
forming a conductor abutting the insulator and overlying a second portion of the semiconductor substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a substrate of a first conductivity type having a first surface;
a first source region of the first conductivity type on the first surface of the substrate;
a second source region of the first conductivity type on the first surface of the substrate wherein the second source region is spaced apart from the first source region;
a gate structure overlying the first surface of the substrate, the gate structure having a first end overlying an edge of the first source region, a second end overlying an edge of the second source region, the gate structure having a first surface substantially parallel to the first surface of the substrate and facing away from the first surface of the substrate;
an opening extending from the first surface of the gate structure into the gate structure including the opening having sidewalls;
an insulator on at least sidewalls of the opening; and
a conductor abutting the insulator and within the opening. - View Dependent Claims (18, 19, 20)
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Specification