Light emitting device

• US 20060055309A1
• Filed: 09/08/2005
• Published: 03/16/2006
• Est. Priority Date: 09/14/2004
• Status: Active Grant

• Current Assignee: Koito Manufacturing Company Limited
• Original Assignee: Koito Manufacturing Company Limited
• Inventors: Ishida, Hiroyuki, Ono, Masato, Tokida, Tsukasa, Sonobe, Shinya
• Granted Patent: US 7,696,522 B2
• Time in Patent Office: Days
• US Class Current: 313/492
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05005 Structure
• CPC Class Codes: H01L 2224/05023 the whole internal layer protruding from the surface
• CPC Class Codes: H01L 2224/05099 Material
• CPC Class Codes: H01L 2224/05541 Structure
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/16238 the bump connector connecting to a bonding area protruding from the surface of the item
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

A light emitting device including a light source and a light transforming 101 member containing a fluorescent substance for absorbing at least a part of a light emitted from the light source and for emitting a light having a different wavelength. The light source includes a plurality of semiconductor light emitting units 104, at least a part of which are covered with the light transforming member 101. A shielding member 102 between a first semiconductor light emitting unit 104a covered with the light transforming member 101 and a second semiconductor light emitting unit 104b which is adjacent to the semiconductor light emitting unit 104a.

Claims

1. A light emitting device comprising a light source and a light transforming member containing a fluorescent substance for absorbing at least a part of light emitted from the light source and for emitting light having a different wavelength,

wherein the light source includes a plurality of semiconductor light emitting units, at least a part of which are covered with the light transforming member, and

a shielding member between a first semiconductor light emitting unit covered with the light transforming member and a second semiconductor light emitting unit that is adjacent to the first semiconductor light emitting unit.

2. The light emitting device according to claim 1 comprising a support substrate on which the semiconductor light emitting units are mounted, the semiconductor light emitting units having a pair of positive and negative electrodes on the same plane side and mounted such that the positive and negative electrodes are connected to a conductor wiring of the support substrate through a conductive member.

3. The light emitting device according to claim 1 or 2, wherein the shielding member includes a forming member having a penetrating portion in which a semiconductor light emitting unit is to be fitted.

4. The light emitting device according to claim 1 or 2, wherein the shielding member covers a side surface of the semiconductor light emitting unit.

5. The light emitting device according to claim 3, wherein the shielding member is disposed on or applied to the support substrate such that an upper surface thereof is higher than a light emitting surface of the semiconductor light emitting unit.

6. The light emitting device according to claim 3, wherein the shielding member is disposed on or applied to the support substrate such that an upper surface thereof is provided on almost a level with a light emitting surface of the semiconductor light emitting unit.

7. The light emitting device according to claim 1 or 2, wherein the light transforming member covers the light emitting surface of the semiconductor light emitting unit.

8. The light emitting device according to claim 1 or 2, wherein the shielding member includes an insulating member covering a side surface of the semiconductor light emitting unit and including a light reflecting layer on the insulating member.

9. The light emitting device according to claim 1 or 2, wherein the shielding member includes a diffusing material in a resin material.

10. The light emitting device according to claim 7, wherein the shielding film includes an insulating film and a metal film containing at least one metal selected from the group consisting of aluminum, silver and rhodium.

11. The light emitting device according to claim 8, wherein the diffusing material contains at least one material selected from the group consisting of barium sulfate, barium titanate,titanium oxide, aluminum oxide and silicon oxide.

12. The light emitting device according to claim 4, wherein the shielding member is disposed on or applied to the support substrate such that an upper surface thereof is higher than a light emitting surface of the semiconductor light emitting unit.

13. The light emitting device according to claim 4, wherein the shielding member is disposed on or applied to the support substrate such that an upper surface thereof is provided on almost a level with a light emitting surface of the semiconductor light emitting unit.

14. The light emitting device according to claim 5, wherein the light transforming member covers the light emitting surface of the semiconductor light emitting unit.

15. The light emitting device according to claim 6, wherein the light transforming member covers the light emitting surface of the semiconductor light emitting unit.

16. The light emitting device according to claim 7, wherein the shielding member includes a diffusing material in a resin material.

17. The light emitting device according to claim 8, wherein the shielding member includes a diffusing material in a resin material.