Biased pulse DC reactive sputtering of oxide films
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Accused Products
Abstract
A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.
137 Citations
98 Claims
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1-39. -39. (canceled)
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40. A method of depositing a film on a substrate, comprising:
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providing a process gas between a target and a substrate;
providing pulsed DC power to the target;
providing a magnetic field to the target; and
wherein a plasma is generated between the substrate and the target, and wherein a material related to the target is deposited on the substrate by exposure to the plasma. - View Dependent Claims (41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 91, 92, 93, 94)
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59-62. -62. (canceled)
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63. A reactor according to the present invention, comprising:
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a target area for receiving a target;
a magnetic field generator supplying a magnetic field to the target;
a substrate area opposite the target area for receiving a substrate; and
a pulsed DC power supply coupled to the target;
wherein a material is deposited on the substrate by exposure of the substrate to a plasma generated when pulsed DC power from the pulsed DC power supply is applied to the target in the presence of a process gas. - View Dependent Claims (64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 95, 96, 97, 98)
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82-84. -84. (canceled)
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85. A method of depositing a film on a substrate, comprising:
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providing a process gas between a target and a substrate;
providing pulsed DC power to the target to form a plasma; and
providing a magnetic field to the target; and
wherein a material is deposited on the substrate by exposure to the target, and wherein the target is a ceramic target or an alloyed target.
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86. A method of depositing a film on a substrate, comprising:
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providing a process gas between a target and a substrate;
providing pulsed DC power to the target; and
uniformly sweeping the target with a magnetic field;
wherein a material is deposited on by exposure of the substrate to a plasma generated at the target. - View Dependent Claims (87)
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88. A reactor according to the present invention, comprising:
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a target area for receiving a target;
a magnetic field generator supplying a magnetic field to the target;
a substrate area opposite the target area for receiving a substrate; and
a pulsed DC power supply coupled to the target, wherein a material is deposited on the substrate by exposure of the substrate to a plasma generated when pulsed DC power from the pulsed DC power supply is applied to the target in the presence of a process gas and the magnetic field generator uniformly sweeps the target with the magnetic field. - View Dependent Claims (89)
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90. A reactor according to the present invention, comprising:
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a target area for receiving a target;
a magnetic field generator supplying a magnetic field to the target;
a substrate area opposite the target area for receiving a substrate; and
a pulsed DC power supply coupled to the target, wherein a material is deposited on the substrate by exposure of the substrate to a plasma generated when pulsed DC power from the pulsed DC power supply is applied to the target in the presence of a process gas and the target is a ceramic target or an alloyed target.
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Specification