Method for preparation of semiconductive films
First Claim
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1. A process of preparing a semiconductive film comprising:
- applying a solution containing a soluble polymer and a soluble metal precursor onto a substrate to form a polymer and metal containing layer thereon;
treating said substrate including said polymer and metal containing layer for a time to form a coherent composite film;
heating said substrate in an oxygen-containing atmosphere at temperatures characterized as sufficient to remove said polymer from said composite film and form a metal oxide film; and
, reacting said metal oxide film with a sulfur-, selenium- or tellurium-containing gas under conditions sufficient to form a semiconductive film.
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Abstract
A polymer assisted solution process for deposition of semiconductive thin films is presented. The process can be organic solvent-free. The process includes solutions of necessary metal precursors and soluble polymers. After a coating operation, the resultant coating is fired at high temperatures to yield optical quality metal oxide thin films that can be converted to semiconductive thin films.
42 Citations
20 Claims
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1. A process of preparing a semiconductive film comprising:
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applying a solution containing a soluble polymer and a soluble metal precursor onto a substrate to form a polymer and metal containing layer thereon;
treating said substrate including said polymer and metal containing layer for a time to form a coherent composite film;
heating said substrate in an oxygen-containing atmosphere at temperatures characterized as sufficient to remove said polymer from said composite film and form a metal oxide film; and
,reacting said metal oxide film with a sulfur-, selenium- or tellurium-containing gas under conditions sufficient to form a semiconductive film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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- 18. A composition of matter comprising a solution of a water-soluble metal compound and a water-soluble polymer, said solution having a pH of from about 4 to about 7 and characterized as organic-solvent free.
Specification