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Method of manufacturing semiconductor device

  • US 20060057828A1
  • Filed: 09/08/2005
  • Published: 03/16/2006
  • Est. Priority Date: 09/10/2004
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device comprising:

  • forming a gate structure on a major surface of a semiconductor substrate with a gate insulating film interposed therebetween;

    forming a first insulating film to cover top and side surfaces of the gate structure and the major surface of the semiconductor substrate;

    reforming portions of the first insulating film which cover the top surface of the gate structure and the major surface of the semiconductor substrate by an anisotropic plasma process using a gas not containing fluorine; and

    removing the reformed portions of the first insulating film.

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