Polishing apparatus and method for producing semiconductors using the apparatus

• US 20060057940A1
• Filed: 11/07/2005
• Published: 03/16/2006
• Est. Priority Date: 10/28/1998
• Status: Active Grant

• Current Assignee: Kan Yasui, Ryosei Kawai, Sadayuki Nishimura, Shigeo Moriyama, Shigeo Ootsuki, Soichi Katagiri, Takashi Kugaya, Yoshihiro Ishida
• Original Assignee: Kan Yasui, Ryosei Kawai, Sadayuki Nishimura, Shigeo Moriyama, Shigeo Ootsuki, Soichi Katagiri, Takashi Kugaya, Yoshihiro Ishida
• Inventors: Ishida, Yoshihiro, Yasui, Kan, Nishimura, Sadayuki, Kawai, Ryosei, Kugaya, Takashi, Katagiri, Soichi, Ootsuki, Shigeo, Moriyama, Shigeo
• Granted Patent: US 7,137,866 B2
• Time in Patent Office: Days
• US Class Current: 451/5
• CPC Class Codes: B24B 37/042 operating processes therefor
• CPC Class Codes: B24B 41/04 Headstocks; Working-spindles; Features relating thereto
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• CPC Class Codes: B24B 53/02 of plane surfaces on abrasive tools B24B53/017 takes precedence
• CPC Class Codes: B24B 53/12 Dressing tools; Holders therefor

Abstract

The present invention relates to a polishing apparatus, and a semiconductor manufacturing method using the apparatus. Dressing of a grindstone surface is ground by sizing processing whereby dressing of a tool surface can be done while preventing occurrence of cracks on the grindstone surface which is the cause for occurrence of scratches. Further, flatness of the surface of a dressing tool can be guaranteed because of sizing cutting-in; even if a thick grindstone of a few centimeters is used, the flatness can be maintained to the end; and processing with less in-face unevenness can be always carried out. Therefore, the life of the dressing tool can be greatly extended. Further, the present sizing-dressing is carried out jointly with processing of a wafer to thereby enable improvement of throughput of the apparatus as well as maintenance of a processing rate. The present apparatus and method are effective for planarization of various substrate surfaces having irregularities.

Claims

1. A polishing apparatus which imparts relative motion between a layer with a concave portion and a convex portion on a semiconductor wafer, comprising:

a polishing tool comprising a grindstone and having a plane polishing surface to polish the surface of said semiconductor wafer by said plane polishing surface of said grindstone;

a dressing tool having a plane dressing surface for forming a surface roughness on the plane polishing surface of said grindstone;

a first moving means for imparting relative motion in a direction horizontal to the plane polishing surface of said grindstone between said dressing tool and said polishing tool;

a second moving means for moving said dressing tool in a direction vertical to the plane polishing surface of said grindstone; and

a control means for permitting to execute movement caused by said first moving means while controlling a position of said second moving means.

2. The polishing apparatus according to claim 1, wherein said grindstone is formed of abrasive grain and a material for joining and holding said abrasive grain.

3. The polishing apparatus according to claim 1, wherein said dressing tool includes a plurality of kinds of hard grain.

4. The polishing apparatus according to claim 3, wherein said hard grain is diamond.

5. The polishing apparatus according to claim 1, wherein said control means comprises a detection means for detecting contact of said grindstone with said dressing tool and controls to stop said second moving means on the basis of the detection of contact between said grindstone and said dressing tool by said detection means.

6. The polishing apparatus according to claim 1, wherein said first moving means moves said dressing tool, said grindstone or both of them so that said dressing tool moves on said polishing tool.

7. The polishing apparatus according to claim 1, wherein said control means comprises a setting means for setting a cut-in amount of said dressing tool with respect to said grindstone, and said second moving means moves in accordance with a value set by said setting means.

8. The polishing apparatus according to claim 7, wherein said control means realizes the cut-in amount set by said setting means by moving said second moving means plural times.

9. The polishing apparatus according to claim 8, wherein the cut-in amount by said setting means is set to be smaller than depth required to stick the hard grain contained in said dressing tool into said grindstone.

10. A polishing apparatus which imparts relative motion between a layer with a concave portion and a convex portion, comprising:

a polishing tool comprising a grindstone and having a plane polishing surface to polish the surface of said semiconductor wafer by said plane polishing surface of said grindstone;

a dressing tool having a plane dressing surface for forming a surface roughness on the plane polishing surface of said grindstone; and

a means for inhibiting movement of said dressing tool in a direction vertical to the polishing surface of said grindstone.

11. A method for manufacturing a semiconductor for effecting polishing-processing while pressing a thin film surface adhered to a surface of a semiconductor substrate formed with an irregularity pattern to the polishing surface of a grindstone for relative motion comprising:

forming a surface roughness with a dressing tool on the polishing surface of said grindstone, during a period between polishing processing or during the polishing process, while controlling a position of said dressing tool in a vertical direction with respect to said polishing surface.