Deposition of TiN films in a batch reactor

• US 20060060137A1
• Filed: 03/31/2005
• Published: 03/23/2006
• Est. Priority Date: 09/22/2004
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM International NV
• Inventors: Vandezande, Lieve, Bankras, Radko Gerard, Snijders, Gert-Jan, Hasper, Albert, De Blank, Marinus J.
• Granted Patent: US 7,966,969 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition

Abstract

Titanium nitride (TiN) films are formed in a batch reactor using titanium chloride (TiCl₄) and ammonia (NH₃) as precursors. The TiCl₄ is flowed into the reactor in temporally separated pulses. The NH₃ can also be flowed into the reactor in temporally spaced pulses which alternate with the TiCl₄ pulses, or the NH₃ can be flowed continuously into the reactor while the TiCl₄ is introduced in pulses. The resulting TiN films exhibit low resistivity and good uniformity.

Claims

1-45. -45. (canceled)

46. A batch reactor, comprising:

a reaction chamber configured to accommodate 25 or more semiconductor substrates;

a gas inlet into the reaction chamber; and

a gas delivery system programmed to deliver titanium chloride through the inlet and into the reaction chamber in temporally separated pulses.

47. The batch reactor of claim 46, wherein the gas delivery system is configured to deliver a constant flow of ammonia into the reaction chamber.

48. The batch reactor of claim 46, wherein the gas delivery system is configured to deliver an ammonia flow into the reaction chamber in temporally separated pulses.

49. The batch reactor of claim 46, wherein the gas delivery system is configured to deliver ammonia into the reaction chamber through a gas injector comprising a plurality of vertically spaced gas inlets.

50. The batch reactor of claim 46, wherein the gas delivery system comprises a bubbler.

51. The batch reactor of claim 46, wherein the gas delivery system comprises a gas vaporizer.

52. The batch reactor of claim 46, wherein the reaction chamber is configured to accommodate 100 or more substrates.

53. A batch reactor, comprising:

a vertically extending reaction chamber configured to accommodate a plurality of vertically spaced semiconductor substrates, the chamber having a top end and a bottom end;

a purge gas injector accommodated inside the chamber, wherein the purge gas injector extends upwardly from proximate the bottom end of the reactor and has an opening to the reaction chamber proximate the top end of reaction chamber, wherein the purge gas injector is connected to a feed for purge gas and is configured to expel substantially all purge gas flowing through the purge gas injector out of the opening;

at least one reactant gas injector accommodated in the reaction chamber, the at least one reactant gas injector extending substantially a height of the chamber and connected to a process gas delivery system, the process gas delivery system configured to deliver two process gases to the reaction chamber, one process gas through each of the two injectors; and

a gas exhaust proximate the bottom end of the reaction chamber.

54. The batch reactor of claim 53, wherein the purge gas injector only opens proximate a top of the reaction chamber.

55. The batch reactor of claim 53, wherein the reaction chamber has a closed top end and a bottom end which can be opened for introduction of the substrates.

56. The batch reactor of claim 53, wherein the at least one reactant gas injectors is a multiple hole injector having a plurality of vertically spaced-apart holes for discharging gas into the reaction chamber in a vertically distributed manner.

57. The batch reactor of claim 56, comprising two reactant gas injectors, wherein the one of the two reactant gas injectors is in gas communication with a source of NH₃ and wherein the gas delivery system is configured to deliver NH₃ through the one of the reactant gas injectors.

58. The batch reactor of claim 57, wherein an other of the two reactant gas injectors is in gas communication to a source of TiCl₄.

59. The batch reactor of claim 58, wherein the other of the two reactant gas injectors is a multiple hole injector having a plurality of vertically spaced-apart holes to discharge gas into the reaction chamber in a vertically distributed manner.

60. The batch reactor of claim 58, wherein the gas delivery system is programmed to deliver the TiCl₄ through the injector into the reaction chamber in temporally separated pulses.

61. The batch reactor of claim 53, wherein the reaction chamber is configured to accommodate 25 or more substrates.

62. The batch reactor of claim 61, wherein the reaction chamber is configured to accommodate 50 or more substrates.

63. The batch reactor of claim 62, wherein the reaction chamber is configured to accommodate 100 or more substrates.