SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME

• US 20060060861A1
• Filed: 12/02/2005
• Published: 03/23/2006
• Est. Priority Date: 11/27/1995
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukunaga, Takeshi, Yamazaki, Shunpei
• Granted Patent: US 7,727,898 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: H01J 2217/49 Display panels, e.g. not making use of alternating current H01J2211/10 takes precedence
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1244 for preventing breakage, peeling or short circuiting
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device having reliable electrode contacts. First, an interlayer dielectric film is formed from a resinous material. Then, window holes are formed. The interlayer dielectric film is recessed by oxygen plasma. This gives rise to tapering window holes. This makes it easy to make contacts even if the circuit pattern is complex.

Claims

1. A display device comprising:

a substrate;

a first insulating film comprising a silicon nitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

2. A device according to claim 1 wherein said first insulating film is provided over a gate electrode provided over said substrate.

3. A device according to claim 1 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

4. A display device comprising:

a substrate;

a first insulating film comprising a silicon oxynitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

5. A device according to claim 4 wherein said first insulating film is provided over a gate electrode provided over said substrate.

6. A device according to claim 4 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

7. A display device comprising:

a substrate;

a first insulating film comprising a silicon nitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film and having a rounded edge portion; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

8. A device according to claim 7 wherein said first insulating film is provided over a gate electrode provided over said substrate.

9. A device according to claim 7 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

10. A display device comprising:

a substrate;

a first insulating film comprising a silicon oxynitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film and having a rounded edge portion; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

11. A device according to claim 10 wherein said first insulating film is provided over a gate electrode provided over said substrate.

12. A device according to claim 10 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

13. A liquid crystal display device comprising:

a substrate;

a first insulating film comprising a silicon nitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

14. A device according to claim 13 wherein said first insulating film is provided over a gate electrode provided over said substrate.

15. A device according to claim 13 farther comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

16. A liquid crystal display device comprising:

a substrate;

a first insulating film comprising a silicon oxynitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said fast insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

17. A device according to claim 16 wherein said first insulating film is provided over a gate electrode provided over said substrate.

18. A device according to claim 16 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

19. A plasma display device comprising:

a substrate;

a first insulating film comprising a silicon nitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

20. A device according to claim 19 wherein said first insulating film is provided over a gate electrode provided over said substrate.

21. A device according to claim 19 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

22. A plasma display device comprising:

a substrate;

a first insulating film comprising a silicon oxynitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

23. A device according to claim 22 wherein said first insulating film is provided over a gate electrode provided over said substrate.

24. A device according to claim 22 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

25. An EL display device comprising:

a substrate;

a first insulating film comprising a silicon nitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

26. A device according to claim 25 wherein said first insulating film is provided over a gate electrode provided over said substrate.

27. A device according to claim 25 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.

28. An EL display device comprising:

a substrate;

a first insulating film comprising a silicon oxynitride provided over said substrate

a second insulating film comprising a resinous material provided over said first insulating film;

a contact hole provided in said first insulating film and said second insulating film; and

a step provided in said contact hole and provided over an upper surface of said first insulating film.

29. A device according to claim 28 wherein said first insulating film is provided over a gate electrode provided over said substrate.

30. A device according to claim 28 further comprising:

a drain region provided over said substrate; and

a pixel electrode provided over said second insulating film and connected with said drain region through said contact hole.