Semiconductor light emitting element and method for fabricating the same
First Claim
1. A semiconductor light emitting element comprising:
- multiple semiconductor layers formed on a substrate and then delaminated therefrom, wherein a two-dimensional periodic structure is formed in a first principal surface of the multiple semiconductor layers which was in contact with the substrate.
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Accused Products
Abstract
Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.
41 Citations
14 Claims
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1. A semiconductor light emitting element comprising:
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multiple semiconductor layers formed on a substrate and then delaminated therefrom, wherein a two-dimensional periodic structure is formed in a first principal surface of the multiple semiconductor layers which was in contact with the substrate. - View Dependent Claims (2, 3)
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4. A semiconductor light emitting element comprising:
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a substrate having a two-dimensional periodic structure in a principal surface thereof; and
multiple semiconductor layers formed over the principal surface of the substrate and including an active layer for generating light, wherein the substrate is made of silicon.
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5. A semiconductor light emitting element comprising:
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a substrate having a two-dimensional periodic structure in a principal surface thereof; and
multiple semiconductor layers formed over the principal of the substrate and including an active layer for generating light, wherein a cavity is formed locally between the principal surface of the substrate and a first principal surface of the multiple semiconductor layers.
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6. A method for fabricating a semiconductor light emitting element, the method comprising the steps of:
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(a) forming a first two-dimensional periodic structure in a principal surface of a substrate;
(b) forming multiple semiconductor layers over the first two-dimensional periodic structure; and
(c) delaminating the multiple semiconductor layers from the substrate. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14)
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Specification