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High efficiency group III nitride LED with lenticular surface

  • US 20060060874A1
  • Filed: 03/17/2005
  • Published: 03/23/2006
  • Est. Priority Date: 09/22/2004
  • Status: Active Grant
First Claim
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1. A high efficiency Group III nitride light emitting diode comprising:

  • a substrate selected from the group consisting of semiconducting and conducting materials;

    a Group III nitride-based light emitting region on said substrate; and

    a lenticular surface containing silicon carbide on said light emitting region.

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