High ouput small area group III nitride leds
First Claim
Patent Images
1. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
- an area of 100,000 square microns or less;
a forward voltage of less than 4.0 volts a radiant flux of at least 24 milliwatts at 20 milliamps drive current; and
a dominant wavelength between about 395 and 540 nanometers.
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Abstract
A light emitting diode is disclosed with advantageous output on a per unit area basis. The diode includes an area of less than 100,000 square microns, operates at a forward voltage of less than 4.0 volts, produces a radiant flux of at least 24 milliwatts at 20 milliamps drive current, and emits at a dominant wavelength between about 395 and 540 nanometers.
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Citations
45 Claims
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1. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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an area of 100,000 square microns or less;
a forward voltage of less than 4.0 volts a radiant flux of at least 24 milliwatts at 20 milliamps drive current; and
a dominant wavelength between about 395 and 540 nanometers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
a radiant flux per unit area of at least 270 milliwatts per square millimeter, at a dominant wavelength of between about 395 and 540 nm, at a forward voltage of less than 4.0 volts and at 20 milliamps drive current. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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22. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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a die with an area of less than 100,000μ
2;
a 5 mm package encapsulating said die;
a forward voltage of less than 4.0 volts;
an external quantum efficiency of greater than forty five percent (45%) at wavelengths of between about 420 and 465 nm and a drive current of 20 milliamps. - View Dependent Claims (23, 24, 25, 26, 27)
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28. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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a 5 mm (T 1-¾
) polymeric package;
a die in said package with an area of less than 100,000 square microns;
a forward voltage of less than 4.0 volts;
a radiant flux of at least 24 milliwatts at 20 milliamps drive current; and
a dominant wavelength of between about 395 and 540 nm. - View Dependent Claims (29, 30, 31, 32, 33)
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34. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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a conductive silicon carbide substrate; and
respective p-type and n-type Group III nitride layers on said silicon carbide substrate that together with said substrate define a die;
ohmic contacts in a vertical orientation with respect to said silicon carbide substrate and said Group III nitride layers;
a dominant wavelength between 455 and 465 nm;
a polymer package encapsulating said substrate, said Group III nitride layers and portions of said ohmic contacts; and
a radiant flux from said package of at least 270 milliwatts per square millimeter of the die at a drive current of 20 milliamps. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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43. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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an area of 125,000 square microns or less;
a forward voltage of less than 4.0 volts a radiant flux of at least 27 milliwatts at 20 milliamps drive current; and
a dominant wavelength between about 395 and 540 nanometers.
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44. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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a Group III nitride active layer;
an area of 100,000 square microns or less; and
minimum radiant flux characteristics at 20 milliamps drive current defined by FIG. 7 .
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45. A light emitting diode with advantageous output on a per unit area basis, said diode comprising:
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at least one Group III nitride active layer;
an area of 100,000 square microns or less; and
minimum external quantum efficiency characteristics at 20 milliamps drive current defined by FIG. 7 .
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Specification