Tunable low loss material composition and methods of manufacture and use therefore

• US 20060060900A1
• Filed: 11/18/2004
• Published: 03/23/2006
• Est. Priority Date: 09/20/2004
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: Paratek Microwave Incorporated (Blackberry Limited)
• Inventors: Zhang, Xubai, Sengupta, Louise C, Underhill, Elijah A.
• Granted Patent: US 7,557,055 B2
• Time in Patent Office: Days
• US Class Current: 257/295
• CPC Class Codes: C04B 2235/3206 Magnesium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3208 Calcium oxide or oxide-forming salts thereof, e.g. lime
• CPC Class Codes: C04B 2235/3213 Strontium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3215 Barium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3224 Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
• CPC Class Codes: C04B 2235/3225 Yttrium oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3229 Cerium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3251 Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3284 Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
• CPC Class Codes: C04B 2235/3418 Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint glass constituents C04B2235/36
• CPC Class Codes: C04B 2235/3436 Alkaline earth metal silicates, e.g. barium silicate
• CPC Class Codes: C04B 2235/3445 Magnesium silicates, e.g. forsterite
• CPC Class Codes: C04B 2235/3454 Calcium silicates, e.g. wollastonite
• CPC Class Codes: C04B 2235/36 Glass starting materials for making ceramics, e.g. silica glass
• CPC Class Codes: C04B 2235/6025 Tape casting, e.g. with a doctor blade
• CPC Class Codes: C04B 2235/768 Perovskite structure ABO3
• CPC Class Codes: C04B 35/4682 based on BaTiO3 perovskite phase
• CPC Class Codes: C04B 35/47 based on strontium titanates

Abstract

An embodiment of the present invention provides an electronically tunable dielectric material, comprising at least one electronically tunable dielectric phase and at least one compound of low loss complex perovskites. The at least one electronically tunable dielectric phase may be selected from the group consisting of barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof. Further, the barium strontium titanate may of the formula BaxSr1-xTiO3, where x is from about 0 to about 1, or more specifically, but not limited in this respect, may also be of the formula BaxSr1-xTiO3, where x may be from about 0.15 to about 0.65 or from about 0.25 to about 0.60.

Claims

1. An electronically tunable dielectric material, comprising:

at leastone electronically tunable dielectric phase; and

at least one compound of low loss complex perovskites.

2. The electronically tunable dielectric material of claim 1, wherein the at least one electronically tunable dielectric phase is selected from the group consisting of:

barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof.

3. The electronically tunable dielectric material of claim 1, wherein the at least one electronically tunable dielectric phase comprises barium strontium titanate.

4. The electronically tunable dielectric material of claim 3, wherein the barium strontium titanate is of the formula BaxSr1-xTiO3, where x is from about 0 to about 1.

5. The electronically tunable dielectric material of claim 3, wherein the barium strontium titanate is of the formula BaxSr1-xTiO3, where x is from about 0.15 to about 0.65.

6. The electronically tunable dielectric material of claim 3, wherein the barium strontium titanate is of the formula BasSr1-xTiO3, where x is from about 0.25 to about 0.60.

7. The electronically tunable dielectric material of claim 1, wherein the compound of low loss complex perovskites comprises A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combinatio of Ba and Sr;

B1=Mg, Zn or the combination of Mg and Zn;

B2=Ta, Nb or the combination of Ta and Nb.

8. The electronically tunable dielectric material of claim 1, wherein the compound of low loss complex perovskites comprises from about 0.001 to about 50 weight percent of the material.

9. The electronically tunable dielectric material of claim 1, wherein the compound of low loss complex perovskites comprises from about 0.01 to about 20 weight percent of the material.

10. The electronically tunable dielectric material of claim 1, wherein the compound of low loss complex perovskites comprises from about 0.1 to about 5 weight percent of the material.

11. The electronically tunable dielectric material of claim 1, wherein said material is a composite comprising said electronically tunable material combined with and at least one other family of materials.

12. The electronically tunable dielectric material of claim 11, wherein said other family of material is from rate earth oxides, glasses, metal silicates, metal oxides and/or metal titanates.

13. The electronically tunable dielectric composite of claim 12, wherein said rate earth oxides comprises the oxides of scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and any combination of the above.

14. The electronically tunable dielectric composited of claim 12, wherein said rare earth oxides comprises the oxide of Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Gd, Ho and/or Er.

15. The electronically tunable dielectric composite of claim 12, wherein said rare earth oxide comprises CeO2.

16. The electronically tunable dielectric composite of claim 12, wherein the percentage of rare earth oxides comprises from about 0.001 to about 5 mole percent of the electronically tunable dielectric phase.

17. The electronically tunable dielectric composite of claim 12, wherein the percentage of rare earth oxides comprises from about 0.01 to about 3 mole percent of the electronically tunable dielectric phase.

18. The electronically tunable dielectric composite of claim 12, wherein the rare earth oxides comprises from about 0.1 to about 2 mole percent of the electronically tunable dielectric phase.

19. The electronically tunable dielectric composite of claim 12, wherein the glasses comprises from boron, barium, calcium, lithium, manganese, silicon, zinc and/or aluminum-containing glasses.

20. The electronically tunable dielectric composite of claim 12, wherein the glasses comprisises an amount up to 50 weight percent of the materials.

21. The electronically tunable dielectric composite of claim 12, wherein the glasses comprises from about 0.1 to about 25 weight percent of the materials.

22. The electronically tunable dielectric composite of claim 12, wherein said metal silicates comprises from metals from group 2A of the Periodic Table.

23. The electronically tunable dielectric composite of claim 12, wherein the metal silicates comprises from Mg2SiO4, CaSiO3, BaSiO3, and SrSiO3.

24. The electronically tunable dielectric composite of claim 12, wherein the metal silicates comprises from about 0.1 to about 80 weight percent.

25. The electronically tunable dielectric composite of claim 12, wherein the metal silicates comprises from about 5 to aboout 60 weight percent.

26. The electronically tunable dielectric composite of claim 12, wherein the metal silicates comprises from about 0.01 to about 1 weight percent.

27. A method of making an electronically tunable dielectric material comprising:

mixing particles of at least one elctronically tunable dielectric phase and particles of at least one compound of low loss complex perovskites, and particles of optional one other family of material; and

sintering said material.

28. The method of claim 27, wherein the at least one electronically tunable dielectric phase is selected from barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titanate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof.

29. The method of claim 27, wherein the compound of low loss complex perovskites comprises A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combination of Ba and Sr;

B1=Mg, Zn or the combination of Mg and Zn;

B2=Ta, Nb or the combination of Ta and Nb.

30. The method of claim 27, wherein the other family of material can be from rare earth oxides, glasses, metal silicates, metal oxides and/or metal titanates.

31. The method of claim 27, wherein the average particle sizes from about 0.001 to about 5 micron.

32. A method of manufacturing a thin film electronically tunable dielectric material, comprising:

depositing at least one electronically tunable dielectric phase and at least one compound of low loss non-tunable phase on a substrate.

33. The method of claim 32, wherein in said depositing comprises at least one of mechanical, chemical and evaporation.

34. The method of claim 32, wherein said depositing comprises at least one of RF sputtering, pulsed laser deposition, pulsed electron deposition, sol-gel processing, metal organic decomposition (MOD), and chemical vapor deposition (CVD).

35. The method of claim 32, wherein said at least one electronically tunable dielectric phase is selected from barium strontium titanate, barium titanate, strontium titanate, barium calcium titanate, barium calcium zirconium titianate, lead titanate, lead zirconium titanate, lead lanthanum zirconium titanate, lead niobate, lead tantalate, potassium strontium niobate, sodium barium niobate/potassium phosphate, potassium niobate, lithium niobate, lithium tantalate, lanthanum tantalate, barium calcium zirconium titanate, sodium nitrate, and combinations thereof.

36. The method of claim 32, wherein said compound of low loss non-tunable phase comprises complex perovskite A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combination of Ba and Sr;

B1=Mg, Zn or the combination of Mg and Zn;

B2=Ta, Nb or the combination of Ta and Nb.

37. The method of claim 32, further comprising including in said compound another family of material selected from the group consisting of:

rare earth oxides, glasses, metal silicates, metal oxides and/or metal titanates.

38. An electronically tunable dielectric material, comprising:

at least one electronically tunable dielectric phase; and

at least one compound of low loss non-tunable phase on a substrate.

39. The electrically tunable dielectric material of claim 38, wherein said at least one compound of low loss non-tunable phase is at least one compound of low loss complex perovskites which comprises A[B11/3B22/3]O3 materials, where A=Ba, Sr or the combination of Ba and Sr;

B1=Mg, Zn or the combination of Mg and Zn;

B2=Ta, Nb or the combination of Ta and Nb.

40. An electronically tunable dielectric material, comprising:

at least one electronically tunable dielectric phase; and

at least one other family of materials including rare earth oxides.

41. The electronically tunable dielectric material of claim 40, wherein said at least one other family of materials is selected from the group consisting of:

rare earth oxides, glasses, metal silicates, metal oxides or metal titanates.

42. The electronically tunable dielectric material of claim 40, wherein said rare earth oxides comprise the oxides of scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu) and any combination of the above.

43. The electronically tunable dielectric material of claim 40, wherein said rare earth oxides comprise the oxide of Sc, Y, La, Ce, Pr, Nd, Sm, Dy, Gd, Ho or Er and further comprise CeO2.

44. The electronically tunable dielectric material of claim 40, wherein the percentage of said rare earth oxides may comprise from about 0.001 to about 5 mole percent of the electronically tunable dielectric phase.

45. The electronically tunable dielectric material of claim 40, wherein the percentage of said rare earth oxides may comprise from about 0.01 to about 3 mole percent of the electronically tunable dielectric phase.

46. The electronically tunable dielectric material of claim 40, wherein the percentage of said rare earth oxides may comprise from about 0.1 to about 2 mole percent of the electronically tunable dielectric phase.