Bipolar transistor with an improved base emitter junction and method for the production thereof
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Abstract
A bipolar transistor formed in a substrate includes a collector, a base layer above the collector, where the base layer includes a base that is monocrystalline, and an emitter layer that is monocrystalline and above the base, where the emitter layer includes silicon or silicon-germanium. An intermediate layer is above the base layer and below the emitter layer. The intermediate layer includes silicon carbide. The intermediate layer is grown epitaxially and is etchable in a dry plasma relative to the emitter layer.
183 Citations
23 Claims
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1-12. -12. (canceled)
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13. A bipolar transistor formed in a substrate, the bipoloar transistor comprising:
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a collector;
a base layer above the collector, the base layer comprising a base that is monocrystalline;
an emitter layer that is monocrystalline and above the base, the emitter layer comprising silicon or silicon-germanium; and
an intermediate layer above the base layer and below the emitter layer, the intermediate layer comprising silicon carbide, the intermediate layer being grown epitaxially and being selectively etchable in a dry plasma relative to the emitter layer. - View Dependent Claims (14, 15, 16)
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17. A method of manufacturing a bipolar transistor, comprising:
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forming a collector having a doping of a first conductivity type in a substrate;
defining a base region on the collector;
epitaxially forming a base layer having a doping of a second conductivity type above the base region;
epitaxially forming an intermediate layer that is selectively etchable relative to silicon above the base layer;
epitaxially forming an emitter layer having a doping of the first conductivity type above the intermediate layer, the emitter layer comprising a monocrystalline layer and comprising silicon or silicon-germanium; and
structuring the emitter layer anisotropically, the intermediate layer comprising an etching barrier. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification