Field emission lighting device

• US 20060061254A1
• Filed: 07/29/2005
• Published: 03/23/2006
• Est. Priority Date: 09/22/2004
• Status: Abandoned Application

• Current Assignee: Hon Hai Precision Industry Co., Ltd.
• Original Assignee: Hon Hai Precision Industry Co., Ltd.
• Inventors: Chen, Ga-Lane
• Application Number:
  US11/193,891
• Publication Number:
  US 20060061254A1
• Time in Patent Office: Days
• US Class Current: 313/495
• CPC Class Codes: H01J 63/06 Lamps with luminescent screen excited by the ray or stream

Abstract

A lighting device includes a cathode (11), a cover (12), an insulation layer (13), an emitter base (18), a niobium tip (19), a phosphor layer (15), an anode (16) and a silicon oxide layer (17). The cover is formed on the cathode. The insulation layer is formed on the cover. The emitter base is formed on the insulation layer. The niobium tip is formed on the emitter base. The phosphor layer is formed above the niobium tip. The anode is formed on the phosphor layer. The silicon oxide layer is formed on the anode. Each of the niobium tips may be closely combined with the emitter base. The combined niobium tips and the emitter base may be subjected to relatively high voltage electrical fields without being damaged.

Claims

1. A lighting device comprising:

a cathode;

a cover on the cathode;

an insulation layer on the cover;

an emitter base on the insulation layer;

a niobium tip adjoining the emitter base;

a phosphor layer above the niobium tip;

an anode on the phosphor layer; and

a silicon oxide layer on the anode.

2. The lighting device of claim 1, wherein the emitter base defines a diameter in the range of about 10 nanometers to about 100 nanometers.

3. The lighting device of claim 2, wherein the niobium tip defines a bottom diameter essentially equal to the diameter of the emitter base.

4. The lighting device of claim 1, wherein the niobium tip defines an upper diameter in the range of about 0.5 nanometers to about 10 nanometers.

5. The lighting device of claim 1, wherein the emitter base and the niobium tip together define a height in the range of about 100 nanometers to about 2000 nanometers.

6. A lighting device comprising:

a substrate;

a cover on the substrate;

a cathode on the cover;

an insulation layer on the cathode;

an emitter base on the insulation layer;

a niobium tip adjoining the emitter base;

a phosphor layer above the niobium tip;

an anode on the phosphor layer; and

a silicon oxide layer on the anode.

7. The lighting device of claim 6, wherein the emitter base defines a diameter in the range of about 10 nanometers to about 100 nanometers.

8. The lighting device of claim 7, wherein the niobium tip defines a bottom diameter essentially equal to the diameter of the emitter base.

9. The lighting device of claim 6, wherein the niobium tip defines an upper diameter in the range of about 0.5 nanometers to about 10 nanometers.

10. The lighting device of claim 6, wherein the emitter base and the niobium tip together define a height in the range of about 100 nanometers to about 2000 nanometers.

11. A lighting device comprising:

an anode disposed in the lighting device and capable of lighting after bombarding of electrons; and

an emitter assembly spaced from the anode in the lighting device for emitting the electrons to bombard the anode via at least one niobium tip formed thereon.

12. The lighting device of claim 11, wherein the emitter assembly defines a base where the at least one niobium tip is formed thereon, the base defines a diameter in the range of about 10 nanometers to about 100 nanometers.

13. The lighting device of claim 12, wherein the niobium tip defines a bottom diameter essentially equal to the diameter of the base.

14. The lighting device of claim 11, wherein the niobium tip defines an upper diameter in the range of about 0.5 nanometers to about 10 nanometers.

15. The lighting device of claim 12, wherein the base and the niobium tip together define a height in the range of about 100 nanometers to about 2000 nanometers.

16. The lighting device of claim 11, further comprising a phosphor layer formed on the anode for lighting of the anode.