Patterned wafer thickness detection system

• US 20060062897A1
• Filed: 01/11/2005
• Published: 03/23/2006
• Est. Priority Date: 09/17/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Birang, Manoocher, Lubomirsky, Dmitry, Shanmugasundram, Arulkumar, Stevens, Joseph J., Gu, Yuping
• Application Number:
  US11/034,349
• Publication Number:
  US 20060062897A1
• Time in Patent Office: Days
• US Class Current: 427/8
• CPC Class Codes: C23C 18/1632 Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
• CPC Class Codes: C23C 18/1675 Process conditions
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate is provided. In one embodiment, the detected end of an electroless deposition process step is measured while the substrate is rotated relative to the detection mechanism. In another embodiment, a detection mechanism, which is proximate to the processing region, directs electromagnetic radiation onto a substrate surface, which is then reflected by features on the substrate surface and is detected by the detection mechanism. In one aspect, the angle of the directed electromagnetic radiation is perpendicular to the surface of the substrate and the shape of the directed electromagnetic radiation spot is substantially circular in shape. In another aspect, the directed electromagnetic radiation spot is positioned at the center of rotation of the substrate. A controller can be used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.

Claims

1. An apparatus for monitoring an electroless deposition process comprising:

a plurality of chamber walls that enclose a processing region;

a substrate support disposed in the processing region having a substrate receiving surface;

an electromagnetic radiation source that is mounted proximate to the processing region and is adapted to emit electromagnetic radiation that strikes a surface of a substrate mounted on the substrate receiving surface at an angle that is substantially perpendicular to the substrate surface;

a detector that is mounted proximate to the processing region and is adapted to detect the intensity of reflected electromagnetic radiation from the surface of the substrate during an electroless deposition process; and

a controller adapted to receive a signal from the detector and modify the electroless deposition process.

2. The apparatus of claim 1, wherein the electromagnetic radiation source emits electromagnetic radiation at wavelengths between about 200 nanometers and about 800 nanometers.

3. The apparatus of claim 1, wherein the electromagnetic radiation source emits electromagnetic radiation at a wavelength between about 660 nanometers and about 680 nanometers.

4. The apparatus of claim 1, further comprising a drive mechanism to rotate the substrate support relative to the detector, wherein the substrate support has a center of rotation.

5. The apparatus of claim 4, wherein the electromagnetic radiation that strikes a surface of a substrate, positioned on the substrate support, is substantially circular in shape and is positioned at the center of rotation of the substrate support.

6. The apparatus of claim 5, wherein the diameter of the substantially circular electromagnetic radiation is between about 2 micrometers and about 25 millimeters.

7. The apparatus of claim 5, wherein the diameter of the substantially circular electromagnetic radiation is between about 1 millimeter and about 20 millimeters.

8. The apparatus of claim 1, wherein the detector is a spectrometer.

9. The apparatus of claim 1, further comprising a fiber optic cable which receives the electromagnetic radiation from the electromagnetic radiation source and directs it towards the substrate receiving surface.

10. The apparatus of claim 1, wherein the controller further comprises

a memory attached to the controller to store the signal data;

and

a control device wherein the controller device is used to control the electroless deposition process based on commands from the controller based on the comparison of the signal data and a process value.

11. An apparatus for monitoring an electroless deposition process comprising:

a plurality of chamber walls that enclose a processing region;

a substrate support disposed in the processing region having a substrate receiving surface;

a mirror mounted in the processing region;

an electromagnetic radiation source that is mounted proximate to the processing region and is adapted to emit electromagnetic radiation that strikes the mirror and the mirror reflects the electromagnetic radiation towards a surface of a substrate mounted on the substrate receiving surface;

a detector that that is mounted proximate to the processing region and is adapted to detect the intensity of reflected electromagnetic radiation from the surface of the substrate during an electroless deposition process; and

a controller adapted to receive a signal from the detector and modify the electroless deposition process.

12. The apparatus of claim 11, wherein the mirror is a broadband mirror or a narrow band mirror.

13. The apparatus of claim 12, wherein the narrow band mirror reflects wavelengths between about 640 nanometers and about 780 nanometers.

14. The apparatus of claim 11, wherein the detector is a spectrometer.

15. The apparatus of claim 11, wherein the electromagnetic radiation source emits electromagnetic radiation at wavelengths between about 200 nanometers and about 800 nanometers.

16. The apparatus of claim 11, further comprising a drive mechanism to can rotate the substrate support relative to the detector, wherein the substrate support has a center of rotation.

17. The apparatus of claim 16, wherein the electromagnetic radiation that strikes a surface of a substrate, which is positioned on the substrate support, is substantially circular in shape and is positioned at the center of rotation of the substrate support.

18. The apparatus of claim 17, wherein the diameter of the substantially circular electromagnetic radiation is between about 2 micrometers and about 25 millimeters.

19. The apparatus of claim 17, wherein the diameter of the substantially circular electromagnetic radiation is between about 1 millimeter and about 20 millimeters.

20. The apparatus of claim 11, wherein the electromagnetic radiation source is one or more light emitting diodes.

21. An apparatus for monitoring an electroless deposition process comprising:

a plurality of chamber walls that enclose a processing region;

a substrate support disposed in the processing region having a substrate receiving surface;

a drive mechanism that can rotate the substrate support;

an electromagnetic radiation source that is mounted proximate to the processing region and is adapted to emit electromagnetic radiation at a wavelength between about 660 nanometers and about 680 nanometers that is in communication with a center of rotation on a surface of a substrate mounted on the substrate receiving surface at an angle that is substantially perpendicular to the substrate receiving surface;

a detector that that is mounted proximate to the processing region and is adapted to detect the intensity of reflected electromagnetic radiation at a wavelength between about 660 nanometers and about 680 nanometers from the surface of the substrate during an electroless deposition process; and

a controller adapted to receive a signal from the detector and modify the electroless deposition process.

22. A system for monitoring an electroless deposition process comprising:

a plurality of chamber walls that enclose a processing region;

a substrate support disposed in the processing region having a substrate receiving surface;

an electromagnetic radiation source that is mounted proximate to the processing region and is adapted to emit electromagnetic radiation that strikes a surface of a substrate mounted on the substrate receiving surface;

a detector that detects the intensity of the reflected electromagnetic radiation from the surface of a substrate mounted on the substrate receiving surface during an electroless deposition process;

a controller adapted to receive a signal from the detector and modify the electroless deposition process; and

a memory, coupled to the controller, the memory comprising a computer-readable medium having a computer-readable program embodied therein for directing the operation of the electroless deposition system, the computer-readable program comprising;

computer instructions to control the electroless deposition system to;

(i) start processing;

(ii) collect and store into the memory the intensity of the reflected electromagnetic radiation data during the electroless deposition process;

(iii) compare the stored data with the collected data; and

(iv) modify the electroless deposition process when the collected data exceeds a threshold value.

23. The apparatus of claim 22, wherein the threshold value data is stored in the memory.

24. The apparatus of claim 22, wherein the electromagnetic radiation source emits electromagnetic radiation at wavelengths between about 200 nanometers and about 800 nanometers.

25. A method of controlling an electroless deposition process comprising:

positioning a substrate in an electroless deposition chamber;

rotating the substrate;

emitting electromagnetic radiation from a broadband light source onto a surface of the substrate, wherein the shape of the emitted electromagnetic radiation striking the surface of the substrate is substantially circular and the emitted electromagnetic radiation striking the surface of the substrate is positioned at a center of rotation of the substrate;

detecting an intensity of the electromagnetic radiation at one or more wavelengths that is reflected off a surface of a substrate during an electroless deposition process step by use of a detector; and

monitoring the intensity of the electromagnetic radiation at the one or more wavelengths to determine the status of the electroless deposition process.

26. The method of claim 25, wherein detecting an intensity of the electromagnetic radiation during the electroless deposition process further comprises detecting an intensity of the electromagnetic radiation during a first electroless deposition process step and a second electroless deposition process step.

27. The method of claim 25, wherein the one or more wavelengths is between about 200 nanometers and about 800 nanometers.

28. The method of claim 25, wherein the diameter of the substantially circular electromagnetic radiation striking the surface of the substrate is between about 2 micrometers and about 25 millimeters.

29. The method of claim 25, wherein the diameter of the substantially circular electromagnetic radiation striking the surface of the substrate is between about 1 millimeter and about 25 millimeters.

30. The method of claim 25, wherein the angle of the emitted electromagnetic radiation striking the surface of the substrate is substantially perpendicular to the substrate surface.

31. The method of claim 25, further comprising:

emitting electromagnetic radiation from a broadband light source in a direction that is not substantially perpendicular to the substrate surface; and

correcting the shape of the emitted electromagnetic radiation by use of an anamorphic prism so that the electromagnetic radiation striking the surface of the substrate is substantially circular in shape.

32. A method of controlling an electroless deposition process comprising:

delivering an electroless deposition fluid to a substrate in an electroless deposition chamber;

detecting the intensity of the electromagnetic radiation comprising;

rotating the substrate;

emitting electromagnetic radiation from a broadband light source onto a surface of the substrate, wherein the shape of the emitted electromagnetic radiation striking the surface of the substrate is substantially circular and the emitted electromagnetic radiation striking the surface of the substrate is positioned at a center of rotation of the substrate; and

detecting an intensity of the electromagnetic radiation at one or more wavelengths reflected off a surface of a substrate;

comparing the detected intensity of the electromagnetic radiation at a first time with a detected intensity of the electromagnetic radiation at a second time;

starting a deposition timer when the difference between the intensity of the electromagnetic radiation at the first time and the intensity of the electromagnetic radiation at the second time equals a process value; and

modifying an electroless deposition process step after the deposition timer has reached a defined period of time.

33. A method of sensing the initiation of the electroless deposition process comprising:

positioning a substrate in an electroless deposition chamber;

rotating the substrate;

emitting electromagnetic radiation from a broadband light source onto the a surface of the substrate, wherein the shape of the emitted electromagnetic radiation striking the surface of the substrate is substantially circular and the emitted electromagnetic radiation striking the surface of the substrate is positioned at a center of rotation of the substrate;

detecting an intensity of the electromagnetic radiation at one or more wavelengths that is reflected off a surface of a substrate at the start of the electroless deposition process by use of a detector;

detecting an intensity of the electromagnetic radiation at one or more wavelengths that is reflected off a surface of a substrate at a second time by use of a detector; and

modifying an electroless deposition process step when the change in the detected intensity at one or more wavelengths exceed a desired level.

34. An apparatus for monitoring an electroless deposition process comprising:

a plurality of chamber walls that enclose a processing region;

a substrate support disposed in the processing region having a substrate receiving surface;

a motor adapted to rotate the substrate support, wherein the substrate support has an axis of rotation that is substantially perpendicular to the substrate receiving surface;

an electromagnetic radiation source that is adapted to emit electromagnetic radiation that is substantially directed towards a center point on a substrate retained on the substrate receiving surface, wherein the center point is coincident with the axis of rotation;

a detector that is adapted to detect the intensity of reflected electromagnetic radiation from a surface of the substrate during an electroless deposition process; and

a controller adapted to receive a signal from the detector and modify the electroless deposition process.

35. An apparatus for monitoring an electroless deposition process comprising:

a plurality of chamber walls that enclose a processing region;

a substrate support disposed in the processing region having a substrate receiving surface;

a motor adapted to rotate the substrate support;

an electromagnetic radiation source that is adapted to emit electromagnetic radiation that strikes a substrate retained on the substrate receiving surface;

an anamorphic prism that is adapted to distort the shape of the electromagnetic radiation emitted from the electromagnetic radiation source;

a detector that is adapted to detect the intensity of reflected electromagnetic radiation from a surface of the substrate during an electroless deposition process; and

a controller adapted to receive a signal from the detector and modify the electroless deposition process.