Chemical vapor deposition (CVD) apparatus usable in the manufacture of superconducting conductors

• US 20060062900A1
• Filed: 09/21/2004
• Published: 03/23/2006
• Est. Priority Date: 09/21/2004
• Status: Active Grant

• Current Assignee: Superpower, Inc. (Furukawa Electric Company Limited)
• Original Assignee: Superpower, Inc. (Furukawa Electric Company Limited)
• Inventors: Selvamanickam, Venkat
• Granted Patent: US 7,387,811 B2
• Time in Patent Office: Days
• US Class Current: 427/62
• CPC Class Codes: C23C 16/408 of copper or solid solutions thereof
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45572 Cooled nozzles
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/545 for coating elongated substrates
• CPC Class Codes: H10N 60/0464 by metalloorganic chemical vapour deposition [MOCVD]
• CPC Class Codes: Y10S 505/732 Evaporative coating with superconducting material
• CPC Class Codes: Y10T 29/49014 Superconductor

Abstract

A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus is described. The CVD apparatus includes a reactor, at least one substrate heater, at least one precursor supply system, at least one precursor injector, optionally, communicating with at least one temperature regulated manifold, at least one reactants mixer, and, optionally, at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

Claims

1. A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus comprising

a) a reactor;

b) at least one substrate heater;

c) at least one precursor supply system;

d) at least one precursor injector; and

e) at least one temperature regulated manifold.

2. The CVD apparatus according to claim 1 further including at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

3. The CVD apparatus according to claim 2 further including at least one sensor.

4. The CVD apparatus according to claim 3 wherein the at least one sensor comprises at least one of a temperature sensor, a pressure sensor, a vacuum sensor, a speed sensor, and combinations thereof.

5. The CVD apparatus according to claim 2 wherein the at least one controller regulates the at least one substrate heater.

6. The CVD apparatus according to claim 2 wherein the at least one controller regulates the at least one precursor supply system.

7. The CVD apparatus according to claim 2 wherein the at least one controller regulates the at least one precursor injector.

8. The CVD apparatus according to claim 2 wherein the at least one controller regulates a translation of a substrate.

9. The CVD apparatus according to claim 2 wherein the at least one controller regulates at least one aperture of at least one apertured guard.

10. The CVD apparatus according to claim 1 further including at least one vacuum system.

11. The CVD apparatus according to claim 1 further including at least one substrate handler.

12. The CVD apparatus according to claim 11 wherein the at least one substrate handler comprises a translation mechanism.

13. The CVD apparatus according to claim 12 wherein the at least one translation mechanism comprises at least one of at least one conveyor, at least one reel-to-reel unit, at least one robotic translator, and at least one combination thereof.

14. The CVD apparatus according to claim 1 wherein at least one substrate heater comprises at least one radiant heater.

15. The CVD apparatus according to claim 1 wherein the at least one radiant heater comprises at least one lamp.

16. The CVD apparatus according to claim 1 further including at least one isolating housing.

17. The CVD apparatus according to claim 16 further including at least one cooling mechanism.

18. The CVD apparatus according to claim 17 wherein the at least one cooling mechanism comprises a gaseous cooling.

19. The CVD apparatus according to claim 17 wherein the gaseous cooling is directed at the at least one radiant heater.

20. The CVD apparatus according to claim 16 further including at least one insulating wall.

21. The CVD apparatus according to claim 17 further including at least one refractory window.

22. The CVD apparatus according to claim 21 wherein the at least one refractory window comprises quartz.

23. The CVD apparatus according to claim 21 wherein the at least one refractory window protects the at least one radiant heater from at least one of reactants, reaction products, and combinations thereof.

24. The CVD apparatus according to claim 1 wherein the at least one substrate heater comprises at least one multiple zone heater capable of maintaining a translating substrate tape at a substantially isothermal temperature in a deposition zone.

25. The CVD apparatus according to claim 24 further including at least one temperature monitor.

26. The CVD apparatus according to claim 25 further including at least one temperature controller communicating with the at least one temperature monitor.

27. The CVD apparatus according to claim 26 wherein at least one temperature monitor comprises at least one thermocouple.

28. The CVD apparatus according to claim 24 wherein the at least one multiple zone heater comprises a first heating zone comprising a preheating zone capable of heating a translating substrate to substantially the deposition temperature.

29. The CVD apparatus according to claim 24 wherein the at least one multiple zone heater comprises a second heating zone capable of maintaining a translating substrate at substantially the deposition temperature.

30. The CVD apparatus according to claim 24 wherein the at least one multiple zone heater comprises a final heating zone capable of rapidly cooling a translating substrate to substantially below the deposition temperature.

31. The CVD apparatus according to claim 1 further including at least one substrate temperature monitor.

32. The CVD apparatus according to claim 31 wherein the at least one substrate temperature monitor comprises a pyrometer.

33. The CVD apparatus according to claim 20 wherein the isolating housing comprises at least one radiant heater support.

34. The CVD apparatus according to claim 33 wherein a longitudinal axis of the isolating housing is substantially parallel to a longitudinal axis of a translating substrate.

35. The CVD apparatus according to claim 14 wherein the at least one radiant heater further includes at least one cooling mechanism for the at least one terminal of the at least one radiant heater.

36. The CVD apparatus according to claim 1 further including at least one exhaust mechanism capable of communicating with the multiple portions of at least one substrate or the portions of multiple substrates or the multiple portions of at least one substrate and portions of multiple substrates so as to be capable of removing at least one of reactants, reaction products, reaction byproducts, and combination thereof.

37. The CVD apparatus according to claim 1 further including at least one first apertured guard between the at least one precursor injector and at least one substrate.

38. The CVD apparatus according to claim 37 wherein at least one aperture of the at least one first apertured guard is variable.

39. The CVD apparatus according to claim 37 further including at least one exhaust manifold.

40. The CVD apparatus according to claim 39 wherein at least one exhaust manifold communicates with the at least one vacuum system.

41. The CVD apparatus according to claim 40 wherein the at least one exhaust manifold is capable of removing at least one of reactants, reaction products, reaction byproducts, and at least one combination thereof.

42. The CVD apparatus according to claim 37 wherein the at least one first apertured guard between the precursor injector and the at least one substrate is capable of directing gaseous reactants from the precursor injector to the at least one substrate.

43. The CVD apparatus according to claim 37 wherein the at least one first apertured guard between the at least one precursor injector and the at least one substrate is capable of shielding the at least one precursor injector from at least one radiant heat.

44. The CVD apparatus according to claim 1 further including at least one second apertured guard between the at least one substrate and the at least one substrate heater.

45. The CVD apparatus according to claim 44 wherein at least one aperture of the at least second apertured guard is variable.

46. The CVD apparatus according to claim 44 further including the at least one exhaust manifold.

47. The CVD apparatus according to claim 46 wherein the at least one exhaust manifold communicates with at least one vacuum system.

48. The CVD apparatus according to claim 46 wherein the at least one exhaust manifold is capable of removing at least one of reactants, reaction products, reaction byproducts, and at least one combination thereof.

49. The CVD apparatus according to claim 44 wherein at least one aperture is capable of directing radiant heat from the at least one substrate heater toward at least one substrate.

50. A precursor injector useable in a CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus including a reactor, at least one substrate heater, and at least one precursor supply system, the precursor injector comprising:

a) at least one temperature regulated manifold; and

b) at least one reactants mixer.

51. The precursor injector according to claim 50 further including at least one precursor source.

52. The precursor injector according to claim 51 wherein the at least one precursor source comprises at least one solid source.

53. The precursor injector according to claim 52 wherein the at least one solid source comprises at least one powder.

54. The precursor injector according to claim 51 wherein the at least one precursor source comprises at least one source liquid.

55. The precursor injector according to claim 54 wherein the at least one liquid source comprises at least one solution of THF and THD.

56. The precursor injector according to claim 51 further including at least one delivery mechanism.

57. The precursor injector according to claim 56 wherein the at least one delivery mechanism comprises at least one pump when the at least one source is liquid.

58. The precursor injector according to claim 56 wherein the at least one delivery mechanism comprises at least one mill and at least one conveyor when the at least one source is solid.

59. The precursor injector according to claim 51 further including at least one vaporizer.

60. The precursor injector according to claim 59 further including at least one carrier fluid.

61. The precursor injector according to claim 60 wherein the at least one carrier fluid comprises at least one inert gas.

62. The precursor injector according to claim 61 wherein the at least one inert gas comprises at least one of argon, nitrogen, and at least one combination of argon and nitrogen.

63. The precursor injector according to claim 50 wherein at least one reactants mixer is within the at least one temperature regulated manifold.

64. The precursor injector according to claim 63 wherein the at least one reactants mixer comprises the at least one temperature regulated manifold.

65. The precursor injector according to claim 50 wherein the at least one reactants mixer is outside of the at least one temperature regulated manifold.

66. The precursor injector according to claim 65 wherein the at least one reactant mixer comprises at least one oxygen injector communicating with a precursor carrier line.

67. The precursor injector according to claim 50 wherein the at least one temperature regulated manifold includes at least one of at least one cooling coil and at least one heating coil.

68. The precursor injector according to claim 67 wherein the at least one heating coil heats at least one precursor carrier line.

69. The precursor injector according to claim 67 wherein the at least one heating coil heats the at least one oxygen injector.

70. The precursor injector according to claim 50 further including at least one gaseous reactant containment mechanism.

71. The precursor injector according to claim 70 wherein the at least one gaseous reactant containment mechanism comprises at least one gas that blankets at least one substrate.

72. The precursor injector according to claim 71 wherein at least one gas comprises at least one inert gas.

73. The precursor injector according to claim 71 wherein the at least one inert gas comprises at least one of argon, nitrogen, and at least one combination thereof.

74. The precursor injector according to claim 50 wherein the at least one temperature regulated manifold comprises a plurality of orifices for directing the at least one reactant mixture toward at least one substrate.

75. A CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or substantially simultaneously processing portions of multiple substrates or substantially simultaneously processing multiple portions of at least one substrate and portions of multiple substrates, the CVD apparatus comprising

a) a reactor;

b) at least one substrate heater;

c) at least one precursor supply system;

d) at least one precursor injector;

e) at least one temperature regulated manifold;

f) at least one reactants mixer; and

g) at least one controller communicating with at least one substrate heater, the at least one precursor supply system, the at least one precursor injector, the at least one temperature regulated manifold, and combinations thereof.

76. A method for substantially simultaneously processing multiple portions of at least one substrate or portions of multiple substrates or multiple portions of at least one substrate and portions of multiple substrates, the method comprising:

a) providing substantially simultaneously i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates to a reactor;

b) heating the i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates;

c) directing at least one temperature-regulated precursor at the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates; and

d) depositing a film that is a precursor to superconducting film or a superconducting film onto the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates.

77. A method for substantially simultaneously processing multiple portions of at least one substrate or portions of multiple substrates or multiple portions of at least one substrate and portions of multiple substrates, the method comprising:

a) providing at least one precursor injector to a CVD apparatus capable of substantially simultaneously processing multiple portions of at least one substrate or portions of multiple substrates or multiple portions of at least one substrate and portions of multiple substrates;

b) providing substantially simultaneously i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates to the CVD apparatus;

c) heating the i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates;

d) mixing at least one precursor composition;

e) heating the mixed at least one precursor composition;

f) directing the heated and mixed at least one precursor at the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates using the a precursor injector; and

g) depositing a film that is a precursor to superconducting film or a superconducting film onto the heated i) multiple portions of at least one substrate, or ii) portions of multiple substrates, or iii) multiple portions of at least one substrate and portions of multiple substrates.