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Method for manufacturing semiconductor device

  • US 20060063309A1
  • Filed: 09/20/2005
  • Published: 03/23/2006
  • Est. Priority Date: 09/21/2004
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming a peeling layer over a first substrate;

    forming a base insulating layer over the peeling layer and the first substrate;

    forming at least one thin film integrated circuit over the peeling layer with the base insulating layer interposed therebetween;

    forming a protective layer covering the thin film integrated circuit;

    exposing an edge of the peeling layer by removing the base insulating layer selectively;

    etching the peeling layer; and

    transferring the thin film integrated circuit to a second substrate, wherein the etching is proceeded in one direction from the exposed edge of peeling layer, and wherein an adhesive material is provided on the second substrate.

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