Method for manufacturing semiconductor device

• US 20060063342A1
• Filed: 04/20/2004
• Published: 03/23/2006
• Est. Priority Date: 04/25/2003
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Harada, Shin, Fujikawa, Kazuhiro
• Granted Patent: US 7,364,978 B2
• Time in Patent Office: Days
• US Class Current: 438/369
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 21/0465 using masks
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence

Abstract

There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO₂ film and a thin metal film; and introducing dopant ions.

Claims

1. A method of fabricating a semiconductor device by employing ion implantation to provide a semiconductor substrate at a surface thereof with a region having dopant introduced therein, comprising the steps of:

providing said semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film; and

implanting dopant ions.

6. The method of claim 1, wherein said semiconductor substrate is heated to at least 300°

C. and dopant ions are implanted.

7. The method of claim 1, wherein said semiconductor substrate is heated to at least 500°

C. and dopant ions are implanted.

8. The method of claim 1, wherein said polyimide resin film is formed of photosensitive polyimide resin.

9. The method of claim 1, wherein said polyimide resin film has a thickness of at least twice a depth of dopant introduced into said semiconductor substrate at a region free of said polyimide resin film.

10. The method of claim 1, wherein a thin metal film is posed between said polyimide resin film and said semiconductor substrate.

11. The method of claim 1, wherein a thin film formed of SiO₂ is posed between said polyimide resin film and said semiconductor substrate.

24. The method of claim 1, wherein said semiconductor substrate is a SiC semiconductor substrate.

25. The method of claim 1, wherein said mask layer is deposited on said semiconductor substrate at a region to be undoped with dopant ions.

26. The method of claim 1, wherein said dopant ions are implanted into a region unmasked by said mask layer.

2. A method of fabricating a semiconductor device by employing ion implantation to provide a semiconductor substrate at a surface thereof with a region having dopant introduced therein, comprising the steps of:

providing said semiconductor substrate at a surface thereof with a mask layer including a SiO₂ film and a thin metal film; and

implanting dopant ions.

12. The method of claim 2, wherein said semiconductor substrate is heated to at least 300°

C. to 500°

C. and dopant ions are implanted.

13. The method of claim 2, wherein said semiconductor substrate is heated to at least 500°

C. to 800°

C. and dopant ions are implanted.

14. The method of claim 2, wherein said mask layer is formed of at least three layers.

15. The method of claim 2, wherein said SiO₂ film and said thin metal film each have an average thickness of 500 nm to 1.5 μ

m.

16. The method of claim 2, wherein said mask layer includes a SiO₂ film as a film corresponding to a bottommost layer.

17. The method of claim 2, wherein said mask layer includes a thin metal film as a film corresponding to a bottommost layer.

18. The method of claim 2, wherein said mask layer includes a SiO₂ film as a film corresponding to a topmost layer.

19. The method of claim 2, wherein said mask layer includes a thin metal film as a film corresponding to a topmost layer.

20. The method of claim 2, wherein said SiO₂ film is formed by SOG.

21. The method of claim 2, wherein said semiconductor substrate is a SiC semiconductor substrate.

22. The method of claim 2, wherein said mask layer is deposited on said semiconductor substrate at a region to be undoped with dopant ions.

23. The method of claim 2, wherein said dopant ions are implanted into a region unmasked by said mask layer.

3-5. -5. (canceled)